| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R950C6 is a high-voltage N-channel power MOSFET from Infineon Technologies' CoolMOS C6 series. It is based on the superjunction (SJ) principle, enabling low switching and conduction losses. The device is rated for a maximum drain-source voltage of 600V (650V at high junction temperature) and continuous drain current of 4.4A at 25°C (2.8A at 100°C). Maximum on-resistance is 950mΩ at 10V gate drive and 1.5A drain current.
Key parametric values include typical gate charge of 13nC at 10V, input capacitance of 280pF at 100V, and output capacitance energy of 1.3µJ at 400V. The device can handle pulsed drain current up to 12A and single-pulse avalanche energy of 46mJ. The body diode features a high di/dt capability of 500 A/µs.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with Pb-free plating and halogen-free mold compound. It is qualified to JEDEC for industrial applications and is suitable for PFC stages, hard-switching and resonant-switching PWM stages in power supplies, adapters, lighting, server, telecom, and UPS systems.
The maximum drain-source voltage is 600V (650V at high junction temperature).
The continuous drain current is 4.4A at 25°C and 2.8A at 100°C.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount TO-252-3 (DPak) package.
The typical gate charge is 13 nC at Vgs=10V.
Yes, it has Pb-free plating according to the datasheet.
It is listed as RoHS3 compliant, but this has not been independently verified.