| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
126,020 pcs
|
126020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R800CEAUMA1 is a 600V N-Channel enhancement-mode power MOSFET built on Infineon's CoolMOS CE superjunction technology. This platform is optimized for cost-sensitive consumer and lighting applications while maintaining high efficiency standards.
Key electrical specifications include a maximum drain-source voltage of 600V (650V at maximum junction temperature), continuous drain current of 8.4A at case temperature, and a maximum on-resistance of 800mΩ at 10V gate drive. The device offers a typical gate charge of 17.2nC and input capacitance of 373pF, enabling fast switching with low drive requirements.
The MOSFET is housed in a PG-TO252-3-344 (DPAK) surface-mount package with gull-wing leads and three terminals. It is rated for operation over a junction temperature range of -40°C to 150°C with maximum power dissipation of 74W at case temperature. The device is qualified for standard-grade applications including PFC stages, hard-switching PWM stages, and resonant switching stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.31 | $1.31 |
| 10+ | $0.82 | $0.82 |
| 100+ | $0.54 | $0.54 |
| 500+ | $0.42 | $0.42 |
| 1,000+ | $0.37 | $0.37 |
| 2,500+ | $0.27 | $0.27 |
| 25,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V at 25°C, and 650V at maximum junction temperature.
The continuous drain current is 8.4A at case temperature (Tc).
The maximum on-resistance is 800mΩ at a drain current of 2A and gate-source voltage of 10V.
It is supplied in a PG-TO252-3-344 (DPAK) surface-mount package with 3 leads (2 leads plus tab) and gull-wing termination.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant. The datasheet indicates Pb-free plating and halogen-free mold compound.
The typical gate charge (Qg) is 17.2 nC at a gate-source voltage of 10V.