| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R750E6 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS E6 series. It is designed for high-voltage power conversion applications.
Key electrical specifications include a drain-source voltage rating of 600V and a continuous drain current of 5.7A at the case temperature. The device features a maximum drain-source on-resistance of 750mΩ at a gate drive voltage of 10V. It has a maximum power dissipation of 48W and an operating junction temperature range of -55°C to 150°C.
The IPD60R750E6 is offered in a surface-mount TO-252-3 (DPak) package with the supplier device package designation PG-TO252-3-313. This package is suitable for automated assembly processes.
The drain-source voltage rating is 600V.
The maximum continuous drain current is 5.7A at the case temperature.
The maximum drain-source on-resistance is 750mΩ at a gate voltage of 10V and a drain current of 2A.
It is available in a surface mount TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.