| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R650CEATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the CoolMOS CE platform. It features a drain-to-source voltage of 600 V, a continuous drain current of 7 A, and a maximum on-resistance of 650 mΩ at a gate drive of 10 V. The device is designed for high-efficiency power conversion applications and offers low gate charge (20.5 nC) and low output capacitance energy (1.9 µJ at 400 V).
The MOSFET is packaged in a TO-252-3 (DPak) surface mount package and is specified for an operating junction temperature range of -40°C to +150°C. It supports pulsed drain currents up to 19 A and is suited for hard switching and resonant switching topologies in power supplies, adapters, and lighting.
The part uses Pb-free plating and halogen-free mold compound, and is rated for standard grade applications. The gate-source voltage is limited to ±20 V, and the threshold voltage is 3.5 V maximum at a drain current of 200 µA. The device is available in tape and reel packaging (ordering code includes ATMA1 suffix).
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.31 | $0.31 |
| 5,000+ | $0.28 | $0.28 |
| 7,500+ | $0.27 | $0.27 |
| 12,500+ | $0.26 | $0.26 |
| 17,500+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
The maximum continuous drain current is 7 A at case temperature Tc.
The typical on-resistance is 650 mΩ at Vgs = 10 V and Id = 2.4 A.
The device is supplied in a surface-mount TO-252-3 (DPak) package (PG-TO252-3).
The operating junction temperature range is -40°C to +150°C.
The datasheet indicates Pb-free plating and halogen-free mold compound, and the existing database marks it as RoHS3 compliant (unverified).