IPD60R600P7S The Infineon IPD60R600P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
Mfr Part #:

IPD60R600P7S

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD60R600P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
✓ Total Stock: 19,035 pcs
$ Price Range: $1.67

IPD60R600P7S Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,204 pcs
12204 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
5,491 pcs
5491 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1,340 pcs
1340 pcs On Request 1 On Request On Request On Request On Request On Request

IPD60R600P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Medical Grade
Military Grade
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Tape & Reel

IPD60R600P7S Description

Short technical summary and product information.

The Infineon IPD60R600P7S is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage power applications. This technology platform is built on the superjunction principle, offering a revolutionary approach to high voltage power MOSFETs.

 

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 600mΩ, and a typical Gate Charge (Qg) of 9nC. It also features a pulsed drain current (ID,pulse) of 16A and output capacitance (Eoss) of 1.1 µJ at 400V.

 

The device is suitable for hard and soft switching applications such as PFC and LLC stages, offering excellent ESD robustness greater than 2kV (HBM). Its design benefits include ease of use, fast design-in through low ringing tendency, and simplified thermal management due to low switching and conduction losses.

 

Packaged in a DPAK (PG-TO252-3) surface mount package, the IPD60R600P7S is designed for increased power density solutions. Potential applications include PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems.

IPD60R600P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPD60R600P7S 600V CoolMOS P7 N-channel Power MOSFET
Subcategory: Power MOSFET

IPD60R600P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD60R600P7S Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R600P7S Features

  • 650V maximum Drain-Source Voltage.
  • 600mΩ maximum On-Resistance.
  • 9nC typical Gate Charge.
  • Excellent ESD robustness >2kV.
  • Suitable for hard and soft switching.

IPD60R600P7S Applications

  • Used in PFC and LLC stages.
  • Suitable for PC Silverbox applications.
  • Ideal for adapter power supplies.
  • Applicable in LCD and PDP TV power.
  • Used in server and telecom power.

IPD60R600P7S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPD60R600P7S?

The maximum Drain-Source Voltage (Vds) is 650V.

What is the maximum On-Resistance of the IPD60R600P7S MOSFET?

The maximum On-Resistance (Rds(on)) is 600 mΩ.

What is the typical Gate Charge for this Infineon MOSFET?

The typical Gate Charge (Qg) is 9 nC.

What package type is the IPD60R600P7S available in?

The IPD60R600P7S is available in a DPAK (PG-TO252-3) package.

What is the RoHS status of the IPD60R600P7S?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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