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IPD60R600P7 The Infineon IPD60R600P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
Mfr Part #:

IPD60R600P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD60R600P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
✓ Total Stock: 2,500 pcs

IPD60R600P7 Available from 1 distributor

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Xingangxin ✓
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2,500 pcs
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2500 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD60R600P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPD60R600P7 Description

Short technical summary and product information.

The Infineon IPD60R600P7 is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage power applications. This 7th generation technology offers a revolutionary approach to power MOSFETs, combining fast switching capabilities with excellent ease of use, including low ringing tendency and outstanding body diode robustness.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 600mΩ, and a typical Gate Charge (Qg) of 9nC. It also features a pulsed drain current (Id,pulse) of 16A and energy loss (Eoss) of 1.1µJ at 400V. The device is suitable for hard and soft switching applications like PFC and LLC stages due to its commutation ruggedness.

 

Packaged in a PG-TO252-3 surface mount package, the IPD60R600P7 is designed for efficient thermal management. Its features contribute to increased power density solutions, enabling smaller footprints and higher manufacturing quality. The product is fully qualified according to JEDEC for Industrial Applications.

 

Potential applications include PFC stages, hard-switching PWM stages, and resonant switching stages for products such as PC Silverbox, Adapters, LCD & PDP TVs, Lighting, Servers, Telecom, and UPS.

IPD60R600P7 Quick Information

Product Type: Power MOSFET
Series: P7
Canonical Name: Infineon IPD60R600P7 CoolMOS P7 Power MOSFET
Subcategory: Power MOSFET

IPD60R600P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD60R600P7 Features

  • 650V maximum Drain-Source Voltage.
  • 600mΩ maximum On-Resistance.
  • 9nC typical Gate Charge.
  • PG-TO252-3 surface mount package.
  • Excellent ESD robustness >2kV.

IPD60R600P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in PC Silverbox and Adapters.
  • Applicable for LCD & PDP TV power.
  • Designed for Lighting and Server power.
  • Used in Telecom and UPS systems.

IPD60R600P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of IPD60R600P7?

The maximum drain-source voltage (Vds) is 650V at maximum junction temperature.

What is the on-resistance of IPD60R600P7?

The maximum on-resistance (Rds(on)) is 600mΩ.

What is the gate charge of IPD60R600P7?

The typical gate charge (Qg) is 9nC.

What is the pulsed drain current rating of IPD60R600P7?

The maximum pulsed drain current (Id,pulse) is 16A.

What package is IPD60R600P7 available in?

IPD60R600P7 is supplied in a PG-TO252-3 surface mount package.

What is the ESD robustness of IPD60R600P7?

The ESD robustness is greater than 2kV (HBM).

What is the body diode di/dt capability of IPD60R600P7?

The body diode di/dt rating is 900 A/µs.

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