IPD60R600E6 The IPD60R600E6 is an N-Channel power MOSFET from Infineon Technologies, rated for 600V drain-source voltage and 7.3A continuous drain current. It features a low on-resistance of 600mΩ and is offered in a surface-mount TO-252-3 (DPak) package.
Mfr Part #:

IPD60R600E6

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPD60R600E6 is an N-Channel power MOSFET from Infineon Technologies, rated for 600V drain-source voltage and 7.3A continuous drain current. It features a low on-resistance of 600mΩ and is offered in a surface-mount TO-252-3 (DPak) package.
✓ Total Stock: 5,960 pcs
$ Price Range: $0.23 - $0.62

IPD60R600E6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,960 pcs
5960 pcs On Request 1 On Request On Request 15+ On Request On Request

IPD60R600E6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD60R600E6 Description

Short technical summary and product information.

The IPD60R600E6 is an N-Channel enhancement-mode power MOSFET built on Infineon's CoolMOS E6 superjunction technology. It is designed for high-voltage switching applications that demand high efficiency and compact design.

 

Key electrical ratings include a 600V drain-to-source voltage, 7.3A continuous drain current at Tc, and 19A pulsed drain current. The maximum drain-source on-resistance is 600mΩ at Vgs=10V and Id=2.4A. Typical gate charge is 20.5nC at Vgs=10V, input capacitance is 440pF at Vds=100V, and output capacitance stored energy is 1.9µJ at Vds=400V.

 

The CoolMOS E6 series is suited for PFC stages, hard-switching PWM stages, and resonant-switching PWM stages. Typical applications include PC silverboxes, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS. The very low figure of merit (RDS(on) x Qg) and high commutation ruggedness of the body diode (500A/µs di/dt) support robust industrial designs.

 

The device is housed in a PG-TO252-3 (DPak) surface-mount package and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 63W at Tc. The part features Pb-free plating and is halogen-free.

IPD60R600E6 Quick Information

Product Type: Power MOSFET
Series: E6
Canonical Name: IPD60R600E6 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IPD60R600E6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD60R600E6 Estimated Pricing

Qty Low High
1+ $0.62 $0.62
200+ $0.24 $0.24
500+ $0.23 $0.23
1,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R600E6 Features

  • N-channel 600V superjunction power MOSFET.
  • Continuous drain current rating of 7.3A.
  • Low 600mΩ maximum on-resistance.
  • Typical gate charge of 20.5nC.
  • Housed in surface-mount TO-252-3 package.

IPD60R600E6 Applications

  • Used in PFC and switching power supplies.
  • Suitable for hard switching PWM stages.
  • Ideal for resonant switching topologies.
  • Fits server and telecom power units.
  • Applicable to lighting and TV power boards.

IPD60R600E6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IPD60R600E6?

The drain-to-source voltage rating is 600V.

What package is the IPD60R600E6 available in?

The IPD60R600E6 comes in a PG-TO252-3 (DPak) surface-mount package, also referred to as TO-252-3.

What is the operating junction temperature range of the IPD60R600E6?

The operating junction temperature range is -55°C to 150°C.

Is the IPD60R600E6 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum on-resistance of the IPD60R600E6?

The maximum on-resistance is 600mΩ at Vgs=10V and Id=2.4A.

What is the continuous drain current rating of the IPD60R600E6?

The continuous drain current is 7.3A at Tc, with a pulsed current rating of 19A.

What gate drive voltage is recommended for the IPD60R600E6?

A gate drive voltage of 10V is specified for achieving low on-resistance.

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