IPD60R600CP IPD60R600CP is a 600V N-channel power MOSFET from Infineon Technologies. It supports 6.1A continuous drain current and features surface-mount DPAK packaging.
Mfr Part #:

IPD60R600CP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPD60R600CP is a 600V N-channel power MOSFET from Infineon Technologies. It supports 6.1A continuous drain current and features surface-mount DPAK packaging.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.97

IPD60R600CP Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 13+ On Request On Request

IPD60R600CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD60R600CP Description

Short technical summary and product information.

The IPD60R600CP is an N-channel power MOSFET manufactured by Infineon Technologies. It is rated for a maximum drain-to-source voltage of 600V and a continuous drain current of 6.1A at a case temperature of 25°C. The device features a maximum on-resistance of 600mOhm at a gate-to-source voltage of 10V and a drain current of 3.3A. Maximum power dissipation is 60W at a case temperature of 25°C.

 

This MOSFET uses metal-oxide semiconductor technology for high-voltage switching applications. Its gate charge is 27nC at 10V and maximum input capacitance is 550pF at 100V drain-source voltage, supporting efficient gate drive in power conversion circuits. The part is supplied in a TO-252-3, DPAK (2 leads + tab), SC-63 surface-mount package, with a supplier device package designation of PG-TO252-3-313.

 

The device has a maximum gate-source voltage rating of ±20V and a gate threshold voltage of 3.5V at 220µA drain current. Operating junction temperature range is -55°C to 150°C. Typical application contexts for this component include switched-mode power supplies, power factor correction stages, flyback converters, and other high-voltage power switching circuits.

IPD60R600CP Quick Information

Product Type: N-Channel MOSFET
Series: CoolMOS CP
Canonical Name: N-Channel Power MOSFET, 600V, 6.1A
Subcategory: Single N-Channel MOSFET

IPD60R600CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD60R600CP Estimated Pricing

Qty Low High
308+ $0.97 $0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R600CP Features

  • N-channel MOSFET rated for 600V drain-source voltage.
  • Continuous drain current rated at 6.1A.
  • Maximum on-resistance of 600 milliohms.
  • Surface-mount TO-252-3 DPAK package.
  • Junction temperature range from -55 to 150°C.

IPD60R600CP Applications

  • Used in switch-mode power supply circuits.
  • Suitable for power factor correction stages.
  • Can be applied in flyback converters.
  • Fits high-voltage DC-DC converter designs.

IPD60R600CP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IPD60R600CP?

The maximum drain-to-source voltage (Vdss) is 600V.

What continuous drain current does the IPD60R600CP support?

The continuous drain current is 6.1A at a case temperature of 25°C.

What is the on-resistance of the IPD60R600CP?

The maximum on-resistance is 600mOhm at Id=3.3A and Vgs=10V.

What package is the IPD60R600CP available in?

The device is available in a TO-252-3, DPAK (2 leads + tab), SC-63 surface-mount package. The supplier device package is PG-TO252-3-313.

What is the operating temperature range of the IPD60R600CP?

The operating junction temperature range is -55°C to 150°C.

What is the maximum gate-source voltage for the IPD60R600CP?

The maximum gate-source voltage is ±20V, and the recommended drive voltage for the rated on-resistance is 10V.

Is the IPD60R600CP RoHS compliant?

The part is listed as RoHS3 compliant in the source database, but this status is marked unverified and has low confidence.

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