Mfr Part #:

IPD60R600C6ATMA1

N-Channel MOSFET, 600V drain-source voltage, 7.3A continuous drain current, 600mΩ on-resistance at 10V gate drive. Surface mount package TO-252-3 (DPak).

✓ Total Stock: 3,520 pcs

$ Price Range: $0.45 - $1.98

IPD60R600C6ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,520 pcs On Request	3520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD60R600C6ATMA1 Description

Short technical summary and product information.

The IPD60R600C6ATMA1 is a 600V N-channel power MOSFET from Infineon Technologies, featuring a continuous drain current rating of 7.3A at 25°C case temperature. This device utilizes MOSFET (Metal Oxide) technology and offers a typical on-resistance of 600mΩ maximum at 2.4A and 10V gate drive. The gate threshold voltage is 3.5V maximum at 200µA drain current, and the gate charge is 20.5nC at 10V.

For switching applications, the input capacitance is 440pF at 100V drain-source voltage. The maximum power dissipation is 63W at 25°C case temperature. The device operates over a junction temperature range of -55°C to 150°C.

Packaged in a surface-mount TO-252-3 (DPak, SC-63) package, the device is supplied in supplier device package PG-TO252-3. The mounting type is surface mount, suitable for automated assembly processes.

This MOSFET is suitable for high-voltage switching applications such as power supplies, adapters, and lighting systems where efficiency and compact design are important.

IPD60R600C6ATMA1 Quick Information

Product Type: MOSFET

Series: IPD60R600C6

Canonical Name: IPD60R600C6ATMA1 N-Channel MOSFET, 600V, 7.3A, TO-252-3

Subcategory: Single Power MOSFET

IPD60R600C6ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPD60R600C6ATMA1 Estimated Pricing

Qty	Low	High
1+	$1.98	$1.98
10+	$1.27	$1.27
100+	$0.50	$0.50
500+	$0.47	$0.47
2,500+	$0.47	$0.47
10,000+	$0.46	$0.46
25,000+	$0.45	$0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R600C6ATMA1 Features

N-Channel MOSFET with 600V drain-source voltage.
Continuous drain current rating of 7.3A at 25°C.
Maximum on-resistance of 600mΩ at 10V gate drive.
Gate charge of 20.5nC for efficient switching.
Surface-mount TO-252-3 package for compact designs.

IPD60R600C6ATMA1 Applications

Suitable for high-voltage power supply designs.
Ideal for power factor correction circuits.
Used in flyback converters and adapters.
Applicable in LED lighting drivers.

IPD60R600C6ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

600 V.

What is the package type?

TO-252-3, DPak (2 Leads + Tab), SC-63.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

3.5 V maximum at 200 µA drain current.

What is the gate charge?

20.5 nC maximum at 10 V gate-source voltage.

What is the input capacitance?

440 pF maximum at 100 V drain-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	7.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.5 nC
Halogen Free	Yes
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	600 mΩ
Supplier Device Package	PG-TO252-3
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.5 V