| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,129 pcs
|
2129 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPD60R520CP is an N-Channel enhancement-mode power MOSFET built using CoolMOS technology. It is designed for high-voltage power conversion applications. The device features a drain-to-source voltage (Vdss) of 600V and a continuous drain current rating of 6.8A at Tc. The maximum on-resistance (Rds(on)) is 520mOhm at Vgs=10V and Id=3.8A, enabling efficient switching. The gate charge (Qg) is specified at 31nC maximum, which reduces switching losses. The input capacitance (Ciss) is 630pF at Vds=100V, supporting moderate-speed switching. The gate threshold voltage (Vgs(th)) has a maximum of 3.5V at Id=250µA, ensuring reliable turn-on with standard gate drive voltages. The operating junction temperature range is -55°C to +150°C, and the maximum power dissipation is 66W at Tc. The device is packaged in a surface-mount TO-252-3 (DPak) package with supplier device package designation PG-TO252-3-313, suitable for automated assembly processes.
The maximum drain-source voltage is 600V.
The continuous drain current is 6.8A at Tc.
The maximum on-resistance is 520mOhm at Vgs=10V and Id=3.8A.
The operating junction temperature range is -55°C to +150°C.
It comes in a surface-mount TO-252-3 (DPak) package, supplier device package PG-TO252-3-313.