| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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405 pcs
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405 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The Infineon Technologies IPD60R520C6 is a power MOSFET qualified for industrial applications. This device has undergone rigorous electrical, environmental, and mechanical stress testing, demonstrating high reliability.
Key electrical characteristics include a high breakdown voltage of 480V (VDS) under specific test conditions and a gate bias of ±20V at 150°C. The MOSFET has passed various stress tests such as High Temperature Reverse Bias (HTRB), High Temperature Gate Bias (HTGB), and High Humidity High Temp. Reverse Bias (H3TRB) for 1000 hours, with zero failures.
Environmental testing included Temperature Cycling (-55°C to +150°C for 1000 cycles) and Autoclave testing (121°C, 100% RH for 96 hours), both passing without issues. A wave solder simulation at 260°C for 10 seconds also passed. The device exhibits ESD protection with HBM Class 1C (1000V to < 2000V) and CDM Class C3 (≥ 1000V).
The IPD60R520C6 is supplied in a PG-TO252-3 surface-mount package. Its qualification assessment is fully qualified according to JEDEC for Industrial Applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (VDS) is 480V under High Temperature Reverse Bias test conditions.
The gate bias (VGS) is ±20V at 150°C under High Temperature Gate Bias test conditions.
The IPD60R520C6 is supplied in a PG-TO252-3 package.
The Moisture Sensitivity Level (MSL) is 1, which is defined as Unlimited.
Yes, the IPD60R520C6 is fully qualified according to JEDEC for Industrial Applications.