IPD60R400CEAUMA1 N-Channel 600V 14.7A power MOSFET in a surface-mount TO-252 package. 400mOhm on-resistance, 32nC gate charge.
Mfr Part #:

IPD60R400CEAUMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V 14.7A power MOSFET in a surface-mount TO-252 package. 400mOhm on-resistance, 32nC gate charge.
✓ Total Stock: 91,020 pcs
$ Price Range: $0.45 - $1.71

IPD60R400CEAUMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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91,020 pcs
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IPD60R400CEAUMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD60R400CEAUMA1 Description

Short technical summary and product information.

The IPD60R400CEAUMA1 is an N-Channel enhancement-mode power MOSFET from Infineon's CoolMOS CE superjunction technology platform. It is designed for high-voltage power conversion with a maximum drain-source voltage of 600V (650V at Tj,max) and continuous drain current of 14.7A at Tc.

 

Key electrical characteristics include a typical on-resistance of 400mOhm at 10V gate drive, typical gate charge of 32nC, and low output capacitance energy of 2.8µJ at 400V. The device is rated for pulsed drain current up to 30A and maximum power dissipation of 112W.

 

The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with supplier device package PG-TO252-2. It features Pb-free plating and halogen-free mold compound, and is qualified for standard-grade applications such as PFC stages, hard-switching PWM stages, and resonant switching stages in PC silverbox, adapter, LCD/PDP TV, and indoor lighting.

IPD60R400CEAUMA1 Quick Information

Product Type: Power MOSFET
Series: CoolMOS CE
Canonical Name: IPD60R400CEAUMA1 N-Channel CoolMOS CE Power MOSFET
Subcategory: N-Channel Power MOSFET

IPD60R400CEAUMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPD60R400CEAUMA1 Estimated Pricing

Qty Low High
1+ $1.71 $1.71
10+ $1.09 $1.09
100+ $0.72 $0.72
500+ $0.57 $0.57
1,000+ $0.51 $0.51
2,500+ $0.46 $0.46
5,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R400CEAUMA1 Features

  • 600V drain-source voltage rating.
  • 14.7A continuous drain current capability.
  • 400mOhm typical on-resistance at 10V.
  • 32nC typical gate charge for fast switching.
  • Surface-mount TO-252 DPak package.

IPD60R400CEAUMA1 Applications

  • PFC stages in power supplies.
  • Hard-switching PWM converter stages.
  • Resonant switching converter stages.
  • PC silverbox and adapter designs.
  • LCD and PDP TV power circuits.

IPD60R400CEAUMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD60R400CEAUMA1?

The maximum drain-source voltage is 600V, and 650V at maximum junction temperature.

What is the continuous drain current rating?

The continuous drain current is 14.7A at case temperature Tc.

What is the typical on-resistance?

The typical on-resistance is 400mOhm at Id=3.8A and Vgs=10V.

What package is the IPD60R400CEAUMA1 available in?

It is available in a surface-mount TO-252-3 (DPak) package, supplier device package PG-TO252-2.

Is the IPD60R400CEAUMA1 RoHS compliant?

The part is listed as RoHS3 compliant with Pb-free plating and halogen-free mold compound, though compliance data is unverified.

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