Mfr Part #:

IPD60R3K3C6ATMA1

N-Channel power MOSFET from Infineon C6 series with 600V drain-source voltage and 1.7A continuous drain current in a TO252-3 (DPak) surface-mount package.

✓ Total Stock: 18,520 pcs

$ Price Range: $0.26 - $1.15

IPD60R3K3C6ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	18,520 pcs On Request	18520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD60R3K3C6ATMA1 Description

Short technical summary and product information.

The IPD60R3K3C6ATMA1 is an N-Channel power MOSFET from Infineon Technologies' CoolMOS C6 series, designed for high-voltage switching applications. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1.7A at case temperature (Tc). The device offers a maximum on-resistance (Rds on) of 3.3 ohms at Id=500mA and Vgs=10V, enabling efficient power conversion.

Key electrical characteristics include a maximum gate charge (Qg) of 4.6 nC at Vgs=10V and an input capacitance (Ciss) of 93 pF at Vds=100V, supporting fast switching performance. The gate threshold voltage (Vgs(th)) is 3.5V maximum at Id=40µA, and the maximum allowable gate-source voltage (Vgs) is ±20V.

The MOSFET is housed in a surface-mount TO-252-3 (DPak) package (also known as SC-63) with a supplier device package designation of PG-TO252-3. It is rated for a maximum power dissipation of 18.1W at Tc and operates over a junction temperature range of -55°C to 150°C. The part is halogen free and uses Pb-free plating, verified from the datasheet.

IPD60R3K3C6ATMA1 Quick Information

Product Type: MOSFET (Metal Oxide)

Series: CoolMOS C6

Canonical Name: Infineon Technologies IPD60R3K3C6ATMA1 CoolMOS C6 600V N-Channel MOSFET

Subcategory: CoolMOS C6 600V Series

IPD60R3K3C6ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPD60R3K3C6ATMA1 Estimated Pricing

Qty	Low	High
1+	$1.15	$1.15
10+	$0.65	$0.65
100+	$0.45	$0.45
500+	$0.36	$0.36
1,000+	$0.33	$0.33
2,500+	$0.29	$0.29
5,000+	$0.26	$0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R3K3C6ATMA1 Features

600V drain-to-source voltage rating.
1.7A continuous drain current (Tc).
3.3 ohm maximum on-resistance.
Surface-mount TO252-3 DPak package.
Halogen free and Pb-free plating.

IPD60R3K3C6ATMA1 Applications

Used in auxiliary power supplies.
Suitable for offline switching converters.
Ideal for AC-DC flyback converters.
Employed in LED lighting drivers.

IPD60R3K3C6ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating of this MOSFET?

600V (Vdss).

What is the maximum continuous drain current?

1.7A at case temperature (Tc).

What is the on-resistance (Rds on) at typical operating conditions?

3.3 ohms maximum at Id=500mA and Vgs=10V.

What package does this MOSFET come in?

TO-252-3 (DPak) with supplier package PG-TO252-3.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this component RoHS compliant?

RoHS3 compliant (unverified status from database).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	1.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Halogen Free	Halogen Free
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	93 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	18.1 W
Rds On (Max) @ Id, Vgs	3.3 Ohm
Supplier Device Package	PG-TO252-3
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V