| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,254 pcs
|
2254 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
1,477 pcs
|
1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R3K3C6 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the CoolMOS C6 series. It is designed for high-voltage switching applications with a drain-source breakdown voltage of 600V and continuous drain current of 1.7A at case temperature. The device features a maximum on-resistance of 3.3 Ohm at 500mA and 10V gate drive, ensuring low conduction losses.
Key electrical characteristics include a gate threshold voltage of 3.5V maximum at 40µA, a gate charge of 4.6 nC at 10V, and an input capacitance of 93 pF at 100V drain-source voltage. These parameters enable efficient switching performance in power conversion circuits. The maximum power dissipation is 18.1W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, also designated as PG-TO252-3. It is halogen-free and has Pb-free plating, meeting environmental standards. The device is suitable for industrial and multimarket applications such as power supplies, DC-DC converters, and lighting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The continuous drain current is 1.7A at case temperature.
The maximum on-resistance is 3.3 Ohm at 500mA drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount TO-252-3 (DPak) package, also known as PG-TO252-3.
The device is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum gate threshold voltage is 3.5V at 40µA drain current.