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IPD60R360P7SAUMA1 N-Channel 600V, 9A power MOSFET from Infineon's CoolMOS P7 series. Features low Rds(on) of 360mOhm and fast switching.
Mfr Part #:

IPD60R360P7SAUMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V, 9A power MOSFET from Infineon's CoolMOS P7 series. Features low Rds(on) of 360mOhm and fast switching.
✓ Total Stock: 8,520 pcs
$ Price Range: $0.39 - $1.64

IPD60R360P7SAUMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,520 pcs
On Request
8520 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD60R360P7SAUMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD60R360P7SAUMA1 Description

Short technical summary and product information.

The IPD60R360P7SAUMA1 is a 600V N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P7 superjunction platform. It is designed for high efficiency in hard and soft switching topologies such as PFC and LLC converters. The device offers a continuous drain current of 9A at case temperature, with a maximum Rds(on) of 360mOhm at 10V gate drive. Typical gate charge is 13nC, enabling fast switching, and input capacitance is 555pF at 400V drain-source voltage. ESD robustness exceeds 2kV HBM, and the body diode can handle 900A/µs commutation. The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with a PG-TO252-3 supplier device package. It is rated for operation from -40°C to 150°C junction temperature.

IPD60R360P7SAUMA1 Quick Information

Product Type: Power MOSFET
Series: P7
Canonical Name: Infineon Technologies IPD60R360P7SAUMA1 N-Channel 600V 9A CoolMOS P7 MOSFET
Subcategory: Single N-Channel MOSFET

IPD60R360P7SAUMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD60R360P7SAUMA1 Estimated Pricing

Qty Low High
1+ $1.64 $1.64
10+ $1.02 $1.02
100+ $0.67 $0.67
500+ $0.53 $0.53
1,000+ $0.46 $0.46
2,500+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R360P7SAUMA1 Features

  • 600V drain-source voltage rating.
  • 9A continuous drain current.
  • Low Rds(on) of 360mOhm.
  • Fast switching with 13nC gate charge.
  • ESD robustness >2kV HBM.

IPD60R360P7SAUMA1 Applications

  • Used in power factor correction circuits.
  • Ideal for LLC resonant converters.
  • Suitable for server and telecom power supplies.
  • Used in LED lighting applications.
  • Applicable in adapter and TV power stages.

IPD60R360P7SAUMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V nominal, with a maximum of 650V at Tj,max.

What is the package type?

TO-252-3 (DPak) with surface mount.

What is the operating temperature range?

-40°C to 150°C (junction temperature).

Is the device RoHS compliant?

RoHS3 compliant per database entry, unverified.

What is the typical gate charge?

13 nC at 10V gate-source voltage.

What is the ESD robustness?

>2 kV HBM.

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