| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R2K1CEAUMA1 is a 600V N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS CE superjunction platform. This technology delivers low conduction and switching losses, making it suitable for cost-sensitive power conversion applications. The device is rated for a continuous drain current of 2.3A (Tc) and a pulsed drain current of 6A. It features a maximum on-resistance of 2.1 Ohms at 760mA and 10V gate drive, and a typical gate charge of 6.7 nC at 10V. The input capacitance is 140 pF at 100V, and the output capacitance energy is 0.76 µJ at 400V, contributing to efficient switching performance.
The MOSFET is designed for use in power factor correction (PFC) stages, hard-switching PWM converters, and resonant switching converters. Typical applications include PC power supplies, adapters, LCD and PDP televisions, and indoor lighting. The device is qualified for standard grade applications and features Pb-free plating and halogen-free mold compound.
The IPD60R2K1CEAUMA1 is offered in a surface-mount TO-252-3 (DPAK) package, with the supplier device package PG-TO252-3. The operating temperature range is -40°C to 150°C junction temperature, and maximum power dissipation is 38W at case temperature. The device is RoHS3 compliant (unverified) and MSL level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.90 | $0.90 |
| 10+ | $0.56 | $0.56 |
| 100+ | $0.36 | $0.36 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.25 | $0.25 |
| 2,500+ | $0.22 | $0.22 |
| 5,000+ | $0.19 | $0.19 |
| 10,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V, with a maximum of 650V at maximum junction temperature.
The maximum continuous drain current is 2.3A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 2.1 Ohms at 760mA drain current and 10V gate voltage.
The operating junction temperature range is -40°C to 150°C.
The device is available in a TO-252-3, DPAK (2 leads + tab), SC-63 surface-mount package, with supplier device package PG-TO252-3.
The device is marked as RoHS3 compliant, but this status is unverified.
The typical gate charge (Qg) is 6.7 nC at 10V gate voltage.