| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,060 pcs
|
1060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R280P7SAUMA1 is an N-channel power MOSFET from Infineon Technologies, part of the CoolMOS P7 superjunction series. It features a drain-source breakdown voltage of 650V (minimum at Tj,max) and is rated for 12A continuous drain current at Tc, with a pulsed drain current capability of 36A. The maximum on-resistance is 280mΩ at Vgs=10V and Id=3.8A, enabling efficient conduction. The device has a typical gate charge of 18nC and input capacitance of 761pF, contributing to low switching losses.
Designed for both hard and soft switching topologies, this MOSFET is suitable for PFC stages, hard switching PWM converters, and resonant switching LLC converters. It offers excellent body diode ruggedness with a maximum diF/dt of 900A/µs, ESD robustness exceeding 2kV (HBM), and low ringing tendency. The CoolMOS P7 technology provides reduced switching and conduction losses, enabling higher efficiency and power density.
The part is housed in a TO-252-3 (DPak) surface-mount package, with a PG-TO252-3 supplier device package. It is rated for operation over a junction temperature range of -40°C to 150°C, with a maximum power dissipation of 53W at Tc. Compliance data includes RoHS3 (unverified), MSL level 1 (unlimited), and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
| 10+ | $1.22 | $1.22 |
| 100+ | $0.80 | $0.80 |
| 500+ | $0.63 | $0.63 |
| 1,000+ | $0.56 | $0.56 |
| 2,500+ | $0.51 | $0.51 |
| 5,000+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 650V minimum at Tj,max, with a typical rating of 600V.
The maximum continuous drain current is 12A at Tc.
The maximum on-resistance is 280mΩ at Vgs=10V and Id=3.8A.
The operating junction temperature range is -40°C to 150°C.
The package is TO-252-3 (DPak) surface mount, with supplier device package PG-TO252-3.
According to existing data, the part is listed as RoHS3 compliant, but this has not been independently verified.
The typical gate charge is 18nC at Vgs=10V.