| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,236 pcs
|
25236 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
9,812 pcs
|
9812 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IPD60R280P7S is a 600V CoolMOS P7 series power MOSFET designed for high-voltage applications. It utilizes superjunction technology to combine fast switching speeds with excellent ease of use, including low ringing tendency and robust body diode performance.
This MOSFET features a maximum drain-source voltage of 650V and a maximum on-resistance of 280mΩ. With a typical gate charge of 18nC and a pulsed drain current of 36A, it is designed for efficient power conversion.
The IPD60R280P7S is suitable for hard and soft switching applications such as PFC and LLC stages. Its benefits include simplified thermal management due to low losses and increased power density. The device is packaged in a PG-TO252-3 surface mount package.
Potential applications include PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems. It is recommended to use ferrite beads on the gate or separate totem poles for MOSFET paralleling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum.
280mΩ maximum.
18nC.
36A.
PG-TO252-3 surface mount package.
2.1µJ.
900A/µs.