| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD60R180P7SAUMA1 is a 600V N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P7 7th generation superjunction platform. It is designed for high-voltage power conversion with very low switching and conduction losses. Key specifications include a maximum drain-source voltage of 600V (650V at Tj,max), continuous drain current of 18A at Tc, and a maximum on-resistance of 180mOhm at 10V gate drive. The device offers a typical gate charge of 25nC, low input capacitance of 1081pF at 400V, and excellent ESD robustness exceeding 2kV HBM. The body diode is rugged with a commutation capability of 900A/µs. The MOSFET is housed in a surface-mount TO-252-3 (DPAK) package with a PG-TO252-3 supplier package, rated for operation from -40°C to 150°C junction temperature. It is suitable for both hard and soft switching topologies including PFC, LLC, and PWM stages, making it ideal for applications in PC power supplies, adapters, LCD TVs, lighting, servers, telecom, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.20 | $2.20 |
| 10+ | $1.41 | $1.41 |
| 100+ | $0.95 | $0.95 |
| 500+ | $0.76 | $0.76 |
| 1,000+ | $0.70 | $0.70 |
| 2,500+ | $0.66 | $0.66 |
| 5,000+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V (650V at Tj,max).
It comes in a TO-252-3 (DPak) surface-mount package with supplier device package PG-TO252-3.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant (low confidence, unverified).
The maximum total gate charge is 25 nC at Vgs=10V.
The maximum drain-source on-resistance is 180 mOhm at Id=5.6A and Vgs=10V.
Yes, it has ESD robustness greater than 2kV (HBM).