Mfr Part #:

IPD60N10S4L-12

Mfr Name: Infineon

The Infineon IPD60N10S4L-12 is an N-channel OptiMOSTM-T2 Power-Transistor. It offers a 100V drain-source breakdown voltage and a continuous drain current of 60A.

✓ Total Stock: 9,795 pcs

$ Price Range: $0.99

IPD60N10S4L-12 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,344 pcs On Request	5344 pcs	On Request	1	On Request	On Request	1820+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,645 pcs On Request	2645 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Innova Technologies ✓ Non-Authorised Inventory information	1,676 pcs On Request	1676 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	130 pcs On Request	130 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD60N10S4L-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	2440 pF
Mounting Type	Surface Mount
Power Dissipation	94 W
Reverse Recovery Time	70 ns
Tape & Reel	Yes

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IPD60N10S4L-12 Description

Short technical summary and product information.

The Infineon IPD60N10S4L-12 is an N-channel enhancement mode MOSFET from the OptiMOSTM-T2 series. This AEC qualified transistor operates at temperatures up to 175°C and is suitable for high-power applications.

Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 60A at 25°C case temperature. The on-state resistance is as low as 9.8 mΩ at VGS=10V and ID=60A. Dynamic characteristics include input capacitance of 2440 pF and output capacitance of 824 pF.

This device features a thermal resistance of 1.6 K/W (junction-to-case) and a maximum power dissipation of 94W at 25°C. It is packaged in a PG-TO252-3-313 surface-mount package.

The IPD60N10S4L-12 is designed for demanding applications, offering robust performance and reliability. Its features make it suitable for various power conversion and management systems.

IPD60N10S4L-12 Quick Information

Product Type: MOSFET

Canonical Name: Infineon IPD60N10S4L-12 N-channel MOSFET

Subcategory: N-channel

IPD60N10S4L-12 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD60N10S4L-12 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60N10S4L-12 Features

N-channel enhancement mode MOSFET.
100V drain-source breakdown voltage.
60A continuous drain current.
Low on-state resistance.
175°C operating temperature.

IPD60N10S4L-12 Applications

Ideal for 48V inverter applications.
Power supply circuits.
DC-DC converters.
Motor control applications.

IPD60N10S4L-12 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the continuous drain current?

The continuous drain current is 60A at 25°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TO252-3-313.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.