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IPD60N10S4-12 The Infineon IPD60N10S4-12 is an N-channel MOSFET designed for automotive and power applications. It offers a 100V drain-source breakdown voltage and a 60A continuous drain current.
Mfr Part #:

IPD60N10S4-12

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD60N10S4-12 is an N-channel MOSFET designed for automotive and power applications. It offers a 100V drain-source breakdown voltage and a 60A continuous drain current.
✓ Total Stock: 206 pcs
$ Price Range: $2.93

IPD60N10S4-12 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
132 pcs
On Request
132 pcs On Request 1 On Request On Request 18+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
74 pcs
On Request
74 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD60N10S4-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
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IPD60N10S4-12 Description

Short technical summary and product information.

The Infineon IPD60N10S4-12 is an N-channel MOSFET belonging to the OptiMOSTM-T2 family. It is designed for automotive and power applications, featuring a normal level enhancement mode.

 

Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 60A at 25°C case temperature. The drain-source on-state resistance (RDS(on)) is a low 10.4mΩ typical at 60A and 10V gate-source voltage. Dynamic characteristics include an input capacitance (Ciss) of 1900pF typical and a total gate charge (Qg) of 26nC typical.

 

This MOSFET operates at temperatures ranging from -55°C to +175°C. It is supplied in a PG-TO252-3-313 package suitable for surface mounting.

 

The device is AEC Q101 qualified and RoHS compliant, making it suitable for demanding applications.

IPD60N10S4-12 Quick Information

Product Type: MOSFET
Series: OptiMOSTM-T2
Canonical Name: IPD60N10S4-12 OptiMOSTM-T2 Power-Transistor
Subcategory: N-Channel MOSFET

IPD60N10S4-12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD60N10S4-12 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60N10S4-12 Features

  • 100V drain-source breakdown voltage.
  • 60A continuous drain current.
  • Low 10.4mΩ typical RDS(on).
  • Fast switching times.
  • AEC Q101 qualified.

IPD60N10S4-12 Applications

  • Automotive power systems.
  • General power switching.
  • DC-DC converters.
  • Motor control circuits.

IPD60N10S4-12 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 2.7V.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 10.4mΩ at 60A and 10V.

What is the continuous drain current rating?

The continuous drain current is 60A at 25°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TO252-3-313 for surface mounting.

Is this component RoHS compliant?

Yes, this component is RoHS compliant.

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