| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
711 pcs
|
711 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon IPD600N25N3GBTMA1 is a FET Transistor designed for various electronic applications. This component adheres to RoHS3 compliance standards and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended conditions.
An End-of-Life notice has been issued for the IPD600N25N3GBTMA1. Standard supply may be limited, and availability should be confirmed through open market sourcing. This part is part of the broader category of semiconductors, which are fundamental building blocks for modern digital systems, enabling high-power switching and efficient energy conversion.
Semiconductors are crucial for driving innovation, particularly in areas requiring high power density and low power consumption. Selecting the appropriate semiconductor architecture, such as Silicon (Si), Silicon Carbide (SiC), or Gallium Nitride (GaN), is key to achieving competitive performance in applications ranging from EV powertrains to industrial inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IPD600N25N3GBTMA1 is RoHS3 Compliant.
The MSL for the IPD600N25N3GBTMA1 is Level 1.
The REACH status is Unaffected.
Yes, an End-of-Life notice has been issued for this part.