IPD600N25N3GATMA1 IPD600N25N3GATMA1 is a N-channel power MOSFET from Infineon Technologies. It features a 250V drain-source voltage, 25A continuous drain current, and low on-resistance of 60mOhm in a surface-mount TO-252-3 package.
Mfr Part #:

IPD600N25N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPD600N25N3GATMA1 is a N-channel power MOSFET from Infineon Technologies. It features a 250V drain-source voltage, 25A continuous drain current, and low on-resistance of 60mOhm in a surface-mount TO-252-3 package.
✓ Total Stock: 18,520 pcs
$ Price Range: $1.15 - $3.42

IPD600N25N3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD600N25N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD600N25N3GATMA1 Description

Short technical summary and product information.

The IPD600N25N3GATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 series optimized for high-frequency switching and synchronous rectification. It offers a maximum drain-source voltage of 250V and a continuous drain current of 25A at 25°C case temperature, with pulsed drain current capability up to 100A. On-resistance is rated at 60mOhm maximum at Vgs=10V and Id=25A, ensuring low conduction losses.

 

Key electrical characteristics include a gate threshold voltage of 2-4V, input capacitance of 2350pF, and total gate charge of 29nC at 10V gate drive. The device also specifies avalanche energy (single pulse) of 210mJ and a reverse diode dv/dt capability of 10kV/µs, making it robust for demanding switching applications. Thermal resistance from junction to case is 1.1K/W, with maximum power dissipation of 136W at 25°C.

 

The MOSFET is housed in a PG-TO252-3 (DPak) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. The datasheet confirms halogen-free compliance according to IEC61249-2-21 and Pb-free lead plating.

IPD600N25N3GATMA1 Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: Infineon Technologies OptiMOS 3 N-Channel MOSFET, 250V, 25A, TO-252-3
Subcategory: Power MOSFET

IPD600N25N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD600N25N3GATMA1 Estimated Pricing

Qty Low High
1+ $3.42 $3.42
10+ $2.23 $2.23
100+ $1.55 $1.55
500+ $1.26 $1.26
1,000+ $1.23 $1.23
2,500+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD600N25N3GATMA1 Features

  • N-channel MOSFET with250V drain-source voltage.
  • Continuous drain current of25A at25°C case temperature.
  • Low on-resistance:60mOhm maximum at10V gate drive.
  • Operating junction temperature range -55°C to175°C.
  • Surface-mount package TO252-3 (DPak).

IPD600N25N3GATMA1 Applications

  • Suitable for high-frequency switching power supplies.
  • Ideal for synchronous rectification circuits.
  • Used in DC-DC converters and motor drive applications.

IPD600N25N3GATMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage (Vdss) is250V.

What is the maximum continuous drain current?

At case temperature of25°C, the maximum continuous drain current is25A; at100°C it is18A.

What is the on-resistance?

The maximum drain-source on-resistance is60mOhm at Vgs=10V and Id=25A.

What package does this MOSFET come in?

It comes in a T-252--3, DPAk (2 leads + tab), SC-63 surface-mount package (PG-TO252--3).

What is the gate threshold voltage?

The maximum gate threshold voltage is 4V at Id=90µA (Vds=Vgs). Typical value is 3V.

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