| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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420 pcs
|
420 pcs | On Request | 1 | On Request | On Request | 1835+ | On Request | On Request | |
|
106 pcs
|
106 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD5N25S3-430 is an N-channel enhancement mode OptiMOS™-T Power-Transistor. It is AEC qualified and rated for a maximum operating temperature of 175°C. The device offers a drain-source breakdown voltage of 250V and a continuous drain current of 5A at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and a drain-source on-state resistance of 370-430 mOhms at 10V gate-source voltage and 5A drain current. Dynamic characteristics include input capacitance up to 422pF and output capacitance up to 156pF.
Packaged in a PG-TO252-3-313 surface mount package, this MOSFET is suitable for various power applications. It also features a 100% avalanche tested rating and is RoHS compliant.
This transistor is designed for applications requiring robust performance and high reliability, such as hybrid inverters and DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 250V at VGS=0V and ID=1mA.
The continuous drain current is 5A at TC=25°C and 4A at TC=100°C.
The maximum on-resistance is 430mΩ at VGS=10V and ID=5A, with a typical value of 370mΩ.
It is available in a PG-TO252-3-313 surface mount package (DPAK).
The operating and storage temperature range is -55°C to +175°C.
The total gate charge is 6.2nC maximum.
Typical turn-on delay is 3ns, rise time 2ns, turn-off delay 8ns, fall time 5ns.