IPD530N15N3GATMA1 N-Channel MOSFET from Infineon with 150V drain-source breakdown voltage and 21A continuous drain current. Designed for high-frequency switching and synchronous rectification in a surface-mount TO-252-3 package.
Mfr Part #:

IPD530N15N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon with 150V drain-source breakdown voltage and 21A continuous drain current. Designed for high-frequency switching and synchronous rectification in a surface-mount TO-252-3 package.
✓ Total Stock: 23,520 pcs
$ Price Range: $0.57 - $2.04

IPD530N15N3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD530N15N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD530N15N3GATMA1 Description

Short technical summary and product information.

The IPD530N15N3GATMA1 is an N-channel enhancement-mode power MOSFET from Infineon's OptiMOS 3 series. It features a drain-source breakdown voltage of 150V and a continuous drain current rating of 21A at 25°C case temperature. The maximum on-resistance is 53 milliohms at 10V gate drive, enabling low conduction losses. This MOSFET is optimized for high-frequency switching applications due to its low gate charge (12nC typical maximum) and fast switching times.

 

Key electrical characteristics include a gate threshold voltage range of 2V to 4V, low input capacitance of 667pF typical, and an operating junction temperature range of -55°C to 175°C. The device is avalanche-rated with a single-pulse avalanche energy of 60mJ. It is housed in a PG-TO252-3 package (also known as DPak), which is a surface-mount package suitable for automated assembly.

 

The IPD530N15N3G is RoHS compliant, lead-free, and halogen-free according to IEC61249-2-21. It is an ideal choice for power management in industrial and consumer electronics, including DC-DC converters, power supplies, and motor control circuits.

IPD530N15N3GATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies IPD530N15N3GATMA1 N-Channel MOSFET, 150V, 21A, TO-252-3 Package
Subcategory: N-Channel MOSFET

IPD530N15N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD530N15N3GATMA1 Estimated Pricing

Qty Low High
1+ $2.04 $2.04
10+ $1.37 $1.37
100+ $0.91 $0.91
500+ $0.72 $0.72
1,000+ $0.65 $0.65
2,500+ $0.57 $0.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD530N15N3GATMA1 Features

  • N-channel MOSFET with 150V drain-source voltage.
  • Continuous drain current rating of 21A.
  • Low on-resistance of 53 milliohms maximum.
  • Optimized for high-frequency switching applications.
  • RoHS compliant and halogen free.

IPD530N15N3GATMA1 Applications

  • High-frequency DC-DC converters.
  • Synchronous rectification power supplies.
  • Power management in industrial equipment.
  • Motor control and load switching.

IPD530N15N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD530N15N3GATMA1?

The drain-source breakdown voltage is 150V.

What is the continuous drain current at 25°C?

The continuous drain current is 21A at Tc=25°C.

What package is the IPD530N15N3GATMA1 available in?

It is available in the PG-TO252-3 (DPak) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPD530N15N3GATMA1 RoHS compliant?

Yes, it is RoHS compliant and halogen free according to the datasheet.

What is the maximum drain-source on-resistance?

The maximum on-resistance is 53 milliohms at VGS=10V and ID=18A.

What is the typical gate charge of this MOSFET?

The total gate charge is 8.7nC typical and 12nC maximum at VGS=10V.

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