IPD50R800CE 500V N-Channel CoolMOS CE power MOSFET with 7.6A continuous drain current and 0.8Ω on-resistance. Surface mount TO-252 package.
Mfr Part #:

IPD50R800CE

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
500V N-Channel CoolMOS CE power MOSFET with 7.6A continuous drain current and 0.8Ω on-resistance. Surface mount TO-252 package.
✓ Total Stock: 2,500 pcs

IPD50R800CE Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,500 pcs
2500 pcs On Request 1 On Request On Request 21+ On Request On Request

IPD50R800CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50R800CE Description

Short technical summary and product information.

The IPD50R800CE is a 500V N-Channel power MOSFET from Infineon Technologies' CoolMOS CE family. It utilizes superjunction technology to achieve low on-resistance and fast switching performance. With a maximum drain current of 7.6A and a typical gate charge of 12.4nC, this device is optimized for high-efficiency power conversion.

 

Key electrical characteristics include a maximum drain-source voltage of 500V (550V at Tj,max), a pulsed drain current rating of 15.5A, and an output capacitance energy of 1.46µJ at 400V. The device is designed for ease of use with a typical gate drive voltage of 13V.

 

The MOSFET is housed in a surface-mount TO-252 (DPAK) package, specifically the PG-TO252-3-344 variant. It is Pb-free plated and uses halogen-free mold compound, complying with environmental standards. The device is qualified for standard grade applications.

 

Typical applications include PFC stages, hard switching PWM stages, and resonant switching stages in power supplies for PCs, adapters, LCD/PDP TVs, and indoor lighting.

IPD50R800CE Quick Information

Product Type: Power MOSFET
Series: CE
Canonical Name: IPD50R800CE 500V N-Channel CoolMOS CE Power MOSFET
Subcategory: N-Channel MOSFET

IPD50R800CE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPD50R800CE Features

  • Superjunction CoolMOS CE technology for efficiency.
  • Rated for 500V drain-source voltage.
  • 7.6A continuous drain current capability.
  • Low on-resistance of 0.8 ohms.
  • Surface mount in TO-252 package.

IPD50R800CE Applications

  • Used in PFC stages for power supplies.
  • Ideal for hard switching PWM converters.
  • Suitable for resonant switching topologies.
  • Common in PC and adapter power supplies.
  • Used in LCD and PDP TV power circuits.

IPD50R800CE FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD50R800CE?

The maximum drain-source voltage is 500V, and 550V at Tj,max.

What package is the IPD50R800CE available in?

The device is available in a surface-mount TO-252 (DPAK) package, specifically PG-TO252-3-344.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPD50R800CE RoHS compliant?

The device is indicated as RoHS3 compliant, but this status is unverified.

What is the continuous drain current rating?

The maximum continuous drain current is 7.6A at Tc.

What is the typical gate charge?

The typical gate charge is 12.4nC at Vgs=10V.

What are the typical applications for this MOSFET?

Typical applications include PFC stages, hard switching PWM, and resonant switching in power supplies for PCs, adapters, TVs, and lighting.

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