IPD50R520CP IPD50R520CP is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 550V and continuous drain current of 7.1A. It is housed in a surface-mount TO-252-3 package.
Mfr Part #:

IPD50R520CP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPD50R520CP is an N-Channel MOSFET from Infineon Technologies with a drain-source voltage of 550V and continuous drain current of 7.1A. It is housed in a surface-mount TO-252-3 package.
✓ Total Stock: 2,333 pcs
$ Price Range: $0.70 - $0.72

IPD50R520CP Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request

IPD50R520CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50R520CP Description

Short technical summary and product information.

The IPD50R520CP is an N-Channel MOSFET from Infineon Technologies, part of the CoolMOS CP series. It features a drain-source breakdown voltage of 500V (minimum) and a continuous drain current of 7.1A at 25°C case temperature. The device has a maximum on-resistance of 520 mOhm at 10V gate drive. It is designed for hard- and soft-switching SMPS topologies, DCM PFC for lamp ballast, and PWM for lamp ballast, PDP, and LCD TV applications. The MOSFET is surface-mounted in a TO-252-3 (DPak) package with a PG-TO252-3-11 supplier package. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 66W at 25°C. The device is RoHS compliant with Pb-free lead plating. Key electrical characteristics include a typical gate charge of 13 nC and input capacitance of 680 pF. The avalanche energy rating is 166 mJ single pulse. The gate threshold voltage is typically 3V. This MOSFET is suitable for high-efficiency power conversion applications.

IPD50R520CP Quick Information

Product Type: MOSFET - Single
Series: CoolMOS CP
Canonical Name: Infineon IPD50R520CP N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPD50R520CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD50R520CP Estimated Pricing

Qty Low High
2,500+ $0.72 $0.72
5,000+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50R520CP Features

  • N-Channel MOSFET with 550V drain-source voltage.
  • Continuous drain current rated at 7.1A.
  • Low on-resistance of 520 mOhm maximum.
  • Surface-mount TO-252-3 package.
  • RoHS compliant with Pb-free leads.

IPD50R520CP Applications

  • Used in hard-switching SMPS topologies.
  • Suitable for DCM PFC lamp ballast.
  • Ideal for PWM lamp ballast circuits.
  • Applicable in PDP and LCD TV power supplies.

IPD50R520CP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD50R520CP?

The drain-source voltage is 550V (maximum rating), with a minimum breakdown voltage of 500V at 250µA.

What package does the IPD50R520CP come in?

It is available in a surface-mount TO-252-3 (DPak) package, also designated as PG-TO252-3-11.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the IPD50R520CP RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

What is the maximum continuous drain current?

The continuous drain current is 7.1A at 25°C case temperature and 4.5A at 100°C.

What is the typical on-resistance?

The typical on-resistance is 470 mOhm at 10V gate drive and 3.8A, with a maximum of 520 mOhm.

What is the gate threshold voltage?

The gate threshold voltage is typically 3V, with a minimum of 2.5V and maximum of 3.5V at 250µA.

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