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IPD50R500CEAUMA1 N-Channel MOSFET, 550V drain-source voltage, 7.6A continuous drain current. On-resistance 500mOhm at 2.3A, 13V gate drive.
Mfr Part #:

IPD50R500CEAUMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 550V drain-source voltage, 7.6A continuous drain current. On-resistance 500mOhm at 2.3A, 13V gate drive.
✓ Total Stock: 13,520 pcs
$ Price Range: $0.35 - $1.44

IPD50R500CEAUMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
13,520 pcs
On Request
13520 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD50R500CEAUMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD50R500CEAUMA1 Description

Short technical summary and product information.

IPD50R500CEAUMA1 is an N-Channel MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a drain-source voltage rating of 550V and a continuous drain current of 7.6A at Tc.

 

With a maximum on-resistance of 500mOhm at 2.3A and 13V gate drive, this MOSFET offers efficient power handling. The gate charge is 18.7nC at 10V, and input capacitance is 433pF at 100V, enabling fast switching. The gate threshold voltage is 3.5V max.

 

The device is housed in a surface mount TO-252-3 (DPak) package, also known as PG-TO252-3. It is RoHS compliant, MSL 1 rated, and REACH unaffected, making it suitable for environmentally conscious designs.

IPD50R500CEAUMA1 Quick Information

Product Type: Single MOSFET
Series: CoolMOS CE
Canonical Name: Infineon Technologies IPD50R500CEAUMA1 N-Channel MOSFET
Subcategory: Single MOSFET

IPD50R500CEAUMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD50R500CEAUMA1 Estimated Pricing

Qty Low High
1+ $1.44 $1.44
10+ $0.91 $0.91
100+ $0.60 $0.60
500+ $0.47 $0.47
1,000+ $0.43 $0.43
2,500+ $0.38 $0.38
5,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50R500CEAUMA1 Features

  • N-Channel MOSFET with 550V drain-source voltage.
  • Rated for 7.6A continuous drain current.
  • Low on-resistance of 500mOhm max.
  • Surface mount package in TO252-3 form.
  • RoHS compliant and MSL 1 rated.

IPD50R500CEAUMA1 Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for high-voltage load switching.
  • Can be used in motor control drives.

IPD50R500CEAUMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

550V.

What package does this MOSFET come in?

TO-252-3, DPak (2 Leads + Tab), SC-63, also known as PG-TO252-3.

What is the operating temperature range?

-55°C to 150°C (TJ).

Is this MOSFET RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the drain current rating?

7.6A at Tc.

What is the on-resistance?

500mOhm max at 2.3A, 13V.

What is the gate charge?

18.7nC max at 10V.

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