IPD50R380CE The IPD50R380CE is an N-Channel MOSFET from Infineon with a maximum drain-source voltage of 550V, continuous drain current of 14.1A, and on-resistance of 0.38Ω. It comes in a surface-mount PG-TO252 package.
Mfr Part #:

IPD50R380CE

Available from 3 distributors
Mfr Name: Infineon
Infineon
The IPD50R380CE is an N-Channel MOSFET from Infineon with a maximum drain-source voltage of 550V, continuous drain current of 14.1A, and on-resistance of 0.38Ω. It comes in a surface-mount PG-TO252 package.
✓ Total Stock: 15,002 pcs
$ Price Range: $2.40

IPD50R380CE Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,334 pcs
8334 pcs On Request 1 On Request On Request 16+ On Request On Request
Non-Authorised Inventory information
6,413 pcs
6413 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
255 pcs
255 pcs On Request 1 On Request On Request 20+ On Request On Request

IPD50R380CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Lead Style
Mounting Type

IPD50R380CE Description

Short technical summary and product information.

The Infineon IPD50R380CE is an N-Channel enhancement mode MOSFET designed for high-voltage power switching applications. It features a maximum drain-source voltage (Vds) of 550V and a typical continuous drain current (Id) of 14.1A. The typical on-resistance (Rds(on)) is 0.38Ω, enabling efficient power conversion.

 

The device includes a relatively low gate charge (Qg) of 24.8 nC, which facilitates fast switching and reduced drive losses. An output capacitance (Eoss) of 2.54 µJ at 400V contributes to lower switching losses in resonant topologies. For pulsed operation, the drain current can reach 32.4A.

 

The IPD50R380CE is housed in a PG-TO252 (DPAK) surface-mount package, suitable for automated assembly. The package is RoHS3 compliant and uses halogen-free mold compound, and is rated with MSL 1 for unlimited floor life.

IPD50R380CE Quick Information

Product Type: N-Channel MOSFET
Series: CoolMOS CE
Canonical Name: IPD50R380CE
Subcategory: Single N-Channel Power MOSFET

IPD50R380CE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPD50R380CE Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50R380CE Features

  • Maximum Vds of 550 V.
  • Continuous drain current 14.1 A.
  • Low on-resistance of 0.38 Ω.
  • Typical gate charge 24.8 nC.
  • Surface-mount PG-TO252 package.

IPD50R380CE Applications

  • Ideal for power factor correction circuits.
  • Used in switch-mode power supplies.
  • Suitable for motor control applications.
  • Designed for high-voltage DC-DC converters.

IPD50R380CE FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD50R380CE?

The maximum drain-source voltage (Vds) is 550 V.

What is the maximum continuous drain current?

The typical continuous drain current (Id) is 14.1 A.

What is the on-resistance of the IPD50R380CE?

The maximum on-resistance (Rds(on)) is 0.38 Ω.

What is the package type of the IPD50R380CE?

The device is available in a PG-TO252 (DPAK) surface-mount package.

What is the typical gate charge?

The typical gate charge (Qg) is 24.8 nC.

What is the pulsed drain current rating?

The typical pulsed drain current is 32.4 A.

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