| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,334 pcs
|
8334 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
255 pcs
|
255 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type |
The Infineon IPD50R380CE is an N-Channel enhancement mode MOSFET designed for high-voltage power switching applications. It features a maximum drain-source voltage (Vds) of 550V and a typical continuous drain current (Id) of 14.1A. The typical on-resistance (Rds(on)) is 0.38Ω, enabling efficient power conversion.
The device includes a relatively low gate charge (Qg) of 24.8 nC, which facilitates fast switching and reduced drive losses. An output capacitance (Eoss) of 2.54 µJ at 400V contributes to lower switching losses in resonant topologies. For pulsed operation, the drain current can reach 32.4A.
The IPD50R380CE is housed in a PG-TO252 (DPAK) surface-mount package, suitable for automated assembly. The package is RoHS3 compliant and uses halogen-free mold compound, and is rated with MSL 1 for unlimited floor life.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 550 V.
The typical continuous drain current (Id) is 14.1 A.
The maximum on-resistance (Rds(on)) is 0.38 Ω.
The device is available in a PG-TO252 (DPAK) surface-mount package.
The typical gate charge (Qg) is 24.8 nC.
The typical pulsed drain current is 32.4 A.