| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
726 pcs
|
726 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPD50R1K4CE is a high-voltage N-channel power MOSFET utilizing Infineon's CoolMOS CE technology. This technology is designed for cost-sensitive applications in consumer and lighting markets, meeting high efficiency standards.
The MOSFET features a maximum drain-source voltage rating of 550V and a maximum on-resistance of 1.4 Ohm. It has a typical continuous drain current of 4.8A and a typical gate charge of 8.2 nC. The pulsed drain current is rated at 8.8A, with an energy loss of 0.79 µJ at 400V.
Designed for ease of use and drive, the IPD50R1K4CE is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages. Examples include PC Silverbox, adapters, LCD & PDP TVs, and indoor lighting.
This component comes in a TO-252 package suitable for surface mounting. It features Pb-free plating and a halogen-free mold compound, making it compliant with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 550V.
The maximum on-resistance is 1.4 Ohm.
The typical continuous drain current is 4.8A.
It is supplied in a TO-252 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, it features Pb-free plating.