IPD50R1K4CE The Infineon IPD50R1K4CE is a 500V N-channel CoolMOS CE power MOSFET. It offers low losses and high commutation ruggedness in a TO-252 package.
Mfr Part #:

IPD50R1K4CE

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD50R1K4CE is a 500V N-channel CoolMOS CE power MOSFET. It offers low losses and high commutation ruggedness in a TO-252 package.
✓ Total Stock: 726 pcs
$ Price Range: $0.99

IPD50R1K4CE Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
726 pcs
726 pcs On Request 1 On Request On Request 18+ On Request On Request

IPD50R1K4CE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type

IPD50R1K4CE Description

Short technical summary and product information.

The Infineon IPD50R1K4CE is a high-voltage N-channel power MOSFET utilizing Infineon's CoolMOS CE technology. This technology is designed for cost-sensitive applications in consumer and lighting markets, meeting high efficiency standards.

 

The MOSFET features a maximum drain-source voltage rating of 550V and a maximum on-resistance of 1.4 Ohm. It has a typical continuous drain current of 4.8A and a typical gate charge of 8.2 nC. The pulsed drain current is rated at 8.8A, with an energy loss of 0.79 µJ at 400V.

 

Designed for ease of use and drive, the IPD50R1K4CE is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages. Examples include PC Silverbox, adapters, LCD & PDP TVs, and indoor lighting.

 

This component comes in a TO-252 package suitable for surface mounting. It features Pb-free plating and a halogen-free mold compound, making it compliant with environmental standards.

IPD50R1K4CE Quick Information

Product Type: MOSFET
Series: CoolMOS CE
Canonical Name: Infineon IPD50R1K4CE N-channel Power MOSFET
Subcategory: N-channel Power MOSFET

IPD50R1K4CE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPD50R1K4CE Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50R1K4CE Features

  • 500V drain-source voltage rating.
  • 1.4 Ohm maximum on-resistance.
  • 4.8A typical continuous drain current.
  • TO-252 surface mount package.
  • Pb-free and halogen-free construction.

IPD50R1K4CE Applications

  • Used in PFC power stages.
  • Suitable for PWM switching stages.
  • Applied in resonant switching circuits.
  • Ideal for adapters and lighting.

IPD50R1K4CE FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD50R1K4CE?

The maximum drain-source voltage is 550V.

What is the maximum on-resistance of the IPD50R1K4CE MOSFET?

The maximum on-resistance is 1.4 Ohm.

What is the typical continuous drain current for this MOSFET?

The typical continuous drain current is 4.8A.

What package type is the IPD50R1K4CE supplied in?

It is supplied in a TO-252 package.

Is the IPD50R1K4CE RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

Does the IPD50R1K4CE use Pb-free plating?

Yes, it features Pb-free plating.

Home
Account

Categories