Mfr Part #:

IPD50P04P4L-11

Mfr Name: Infineon

The Infineon IPD50P04P4L-11 is a P-channel MOSFET designed for automotive applications. It features a -40V drain-source breakdown voltage and a maximum operating temperature of 175°C.

✓ Total Stock: 59,391 pcs

$ Price Range: $0.99

IPD50P04P4L-11 Available from 4 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	50,000 pcs On Request	50000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,470 pcs On Request	7470 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,696 pcs On Request	1696 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	225 pcs On Request	225 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD50P04P4L-11 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Power Dissipation	58
Reverse Recovery Time	40
Tape & Reel	True

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IPD50P04P4L-11 Description

Short technical summary and product information.

The Infineon IPD50P04P4L-11 is a P-channel, logic-level, enhancement-mode MOSFET from the OptiMOS®-P2 series. It is AEC qualified and designed for demanding automotive applications, including reverse battery protection.

Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -50A at 25°C case temperature. The on-state resistance is as low as 8.2 mΩ typical at VGS=-10V and ID=-50A. The device operates over a wide temperature range from -55°C to +175°C.

Packaged in a PG-TO252-3-313 surface-mount package, the IPD50P04P4L-11 offers a power dissipation of 58W at 25°C. Its features make it suitable for power management and protection circuits where high efficiency and reliability are critical.

IPD50P04P4L-11 Quick Information

Product Type: MOSFET

Series: OptiMOS®-P2

Canonical Name: Infineon IPD50P04P4L-11 P-channel MOSFET

Subcategory: P-channel MOSFET

IPD50P04P4L-11 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50P04P4L-11 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50P04P4L-11 Features

P-channel logic-level enhancement mode MOSFET.
AEC qualified for automotive applications.
Operates up to 175°C.
Designed for reverse battery protection.
PG-TO252-3-313 surface mount package.

IPD50P04P4L-11 Applications

Ideal for power load switching circuits.
Used in DC-DC converter power stages.
Suitable for battery protection applications.
Great for automotive power distribution.

IPD50P04P4L-11 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPD50P04P4L-11?

The drain-source breakdown voltage is -40V minimum.

What package does the IPD50P04P4L-11 come in?

The device is packaged in PG-TO252-3-313 (DPAK) surface mount package.

What is the operating temperature range of the IPD50P04P4L-11?

The operating and storage temperature range is -55°C to 175°C.

What is the continuous drain current rating of the IPD50P04P4L-11?

The continuous drain current is -50A at 25°C case temperature and -40A at 100°C.

What is the typical on-resistance of the IPD50P04P4L-11?

The typical drain-source on-resistance is 8.2mΩ at VGS=-10V and 12.3mΩ at VGS=-4.5V.

What is the gate threshold voltage of the IPD50P04P4L-11?

The gate threshold voltage ranges from -1.2V minimum to -2.2V maximum, with a typical value of -1.7V.

What is the maximum power dissipation of the IPD50P04P4L-11?

The maximum power dissipation is 58W at 25°C case temperature.