Mfr Part #:

IPD50P04P4-13

Mfr Name: Infineon

The Infineon IPD50P04P4-13 is a P-channel MOSFET designed for automotive applications. It features a -40V drain-source breakdown voltage and a maximum power dissipation of 58W.

✓ Total Stock: 12,150 pcs

$ Price Range: $2.93

IPD50P04P4-13 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,760 pcs On Request	4760 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,491 pcs On Request	4491 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,810 pcs On Request	2810 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	89 pcs On Request	89 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD50P04P4-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Halogen Free	Halogen Free
Input Capacitance	2820 pF
Mounting Type	Surface Mount
Power Dissipation	58 W
Reverse Recovery Time	39 ns

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IPD50P04P4-13 Description

Short technical summary and product information.

The Infineon IPD50P04P4-13 is an OptiMOS®-P2 series P-channel MOSFET. This device is AEC qualified and designed for normal level enhancement mode operation. It offers a drain-source breakdown voltage of -40V and a continuous drain current of -50A at 25°C with a VGS of -10V. The maximum power dissipation is rated at 58W at 25°C.

Key electrical characteristics include a typical gate threshold voltage of -3.0V and a low drain-source on-state resistance of 9.2 mΩ typical at 50A. The device also features various capacitance values such as input capacitance (Ciss) of 2820 pF typical and output capacitance (Coss) of 1000 pF typical. Switching characteristics include a turn-on delay time of 17 ns typical and a turn-off delay time of 22 ns typical.

The IPD50P04P4-13 operates within a temperature range of -55°C to +175°C. It is packaged in a PG-TO252-3-313 surface-mount package. The device is RoHS compliant and features a green package.

IPD50P04P4-13 Quick Information

Product Type: MOSFET

Series: IPD50P04P4-13

Canonical Name: Infineon OptiMOS®-P2 Power-Transistor

Subcategory: Power MOSFET

IPD50P04P4-13 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50P04P4-13 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50P04P4-13 Features

P-channel, normal level enhancement mode MOSFET.
AEC qualified for automotive applications.
-40V drain-source breakdown voltage.
58W maximum power dissipation.
Low 9.2mOhm typical on-resistance.

IPD50P04P4-13 Applications

Automotive powertrain control.
High-side load switching.
Power management circuits.
General purpose switching applications.

IPD50P04P4-13 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPD50P04P4-13?

The drain-source breakdown voltage is -40V.

What is the typical on-resistance of the IPD50P04P4-13?

The typical drain-source on-state resistance is 9.2 mΩ at an ID of -50A and VGS of -10V.

What is the maximum power dissipation for the IPD50P04P4-13?

The maximum power dissipation is 58W at 25°C.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPD50P04P4-13 supplied in?

The IPD50P04P4-13 is supplied in a PG-TO252-3-313 package.

Is the IPD50P04P4-13 RoHS compliant?

Yes, the IPD50P04P4-13 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD50P04P4-13?

The Moisture Sensitivity Level is 1 Unlimited.