| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,906 pcs
|
5906 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD50P03P4L11ATMA2 is a P-Channel enhancement mode MOSFET part of the OptiMOS-P2 family from Infineon Technologies. It is designed for logic level gate drive with gate threshold voltage from -1.0V to -2.0V and maximum gate-source voltage rating of +5V/-16V. The device delivers a continuous drain current of 50A at TC=25°C and features a low drain-source on-state resistance of 10.5mOhm maximum at VGS=-10V and ID=-50A.
The MOSFET is AEC qualified and RoHS compliant with an MSL1 moisture sensitivity level supporting up to 260°C peak reflow. It is 100% avalanche tested with a single pulse avalanche energy rating of 100mJ. The device operates over a junction temperature range of -55°C to 175°C and dissipates up to 58W at 25°C case temperature.
The IPD50P03P4L11ATMA2 is offered in a PG-TO252-3-11 surface mount package. Dynamic characteristics include input capacitance of 2900pF typical and 3770pF maximum at VDS=-25V. Gate charge total is 42nC typical and 55nC maximum. Switching times are fast with typical turn-on delay of 7ns and turn-off delay of 45ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.70 | $1.70 |
| 10+ | $0.94 | $0.94 |
| 100+ | $0.68 | $0.68 |
| 500+ | $0.57 | $0.57 |
| 1,000+ | $0.52 | $0.52 |
| 2,500+ | $0.45 | $0.45 |
| 5,000+ | $0.41 | $0.41 |
| 10,000+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V, with a minimum breakdown voltage of -30V at VGS=0V, ID=-1mA.
At TC=25°C and VGS=-10V the continuous drain current is 50A. At TC=100°C it derates to 42A.
The device is in a PG-TO252-3-11 package, also described as TO-252-3, DPak (2 Leads + Tab), SC-63. It is a surface mount package.
The junction operating temperature range is -55°C to 175°C.
Yes, the IPD50P03P4L11ATMA2 is RoHS3 compliant as indicated in the datasheet.
The gate threshold voltage (Vgs(th)) ranges from -1.0V minimum, -1.5V typical, to -2.0V maximum at VDS=VGS and ID=-85µA.
The maximum power dissipation (Ptot) at TC=25°C is 58W.