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IPD50P03P4L-11 The Infineon IPD50P03P4L-11 is a P-channel MOSFET designed for reverse battery protection. It offers a -30V drain-source breakdown voltage and a maximum RDS(on) of 10.5mΩ at -10V/-50A.
Mfr Part #:

IPD50P03P4L-11

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD50P03P4L-11 is a P-channel MOSFET designed for reverse battery protection. It offers a -30V drain-source breakdown voltage and a maximum RDS(on) of 10.5mΩ at -10V/-50A.
✓ Total Stock: 42,614 pcs
$ Price Range: $2.40

IPD50P03P4L-11 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
41,586 pcs
On Request
41586 pcs On Request 1 On Request On Request 17+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
28 pcs
On Request
28 pcs On Request 1 On Request On Request 14+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD50P03P4L-11 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Reverse Recovery Time
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IPD50P03P4L-11 Description

Short technical summary and product information.

The Infineon IPD50P03P4L-11 is a P-channel, logic-level enhancement mode MOSFET from the OptiMOS®-P2 family. It is AEC qualified and intended for reverse battery protection applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -30V and a low on-state resistance (RDS(on)) as low as 8.3mΩ typical at -10V/-50A. The device operates over a wide temperature range from -55°C to +175°C.

 

Packaged in a PG-TO252-3-11 surface-mount package, this MOSFET is suitable for various power management applications where efficient switching and protection are required.

IPD50P03P4L-11 Quick Information

Product Type: MOSFET
Series: OptiMOS®-P2
Canonical Name: Infineon IPD50P03P4L-11 P-channel MOSFET
Subcategory: P-channel

IPD50P03P4L-11 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD50P03P4L-11 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50P03P4L-11 Features

  • P-channel logic-level enhancement mode MOSFET.
  • AEC qualified for automotive applications.
  • -30V drain-source breakdown voltage.
  • Low on-state resistance (RDS(on)).
  • 175°C maximum operating temperature.

IPD50P03P4L-11 Applications

  • Ideal for load switching applications.
  • Used in battery protection circuits.
  • Suitable for power management systems.
  • Designed for high-efficiency DC-DC converters.

IPD50P03P4L-11 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPD50P03P4L-11?

The drain-source breakdown voltage is -30V.

What is the maximum on-state resistance (RDS(on)) for the IPD50P03P4L-11?

The maximum on-state resistance is 10.5mΩ at VGS=-10V and ID=-50A.

What is the operating temperature range for the IPD50P03P4L-11?

The operating and storage temperature range is -55°C to +175°C.

What package is the IPD50P03P4L-11 supplied in?

The IPD50P03P4L-11 is supplied in the PG-TO252-3-11 package.

Is the IPD50P03P4L-11 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD50P03P4L-11?

The Moisture Sensitivity Level is 1 Unlimited.

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