Mfr Part #:

IPD50N10S3L-16

Mfr Name: Infineon

The Infineon IPD50N10S3L-16 is an N-channel MOSFET designed for automotive applications. It offers a 100V breakdown voltage and 50A continuous drain current.

✓ Total Stock: 22,109 pcs

$ Price Range: $0.99

IPD50N10S3L-16 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	14,647 pcs On Request	14647 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,235 pcs On Request	3235 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,727 pcs On Request	1727 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD50N10S3L-16 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Lead Style	Gull Wing
Mounting Type	Surface Mount
Power Dissipation	100 W
Reverse Recovery Time	97 ns
SVHC Present	Not Present
Tape & Reel	Yes

View Similar Products (0)

IPD50N10S3L-16 Description

Short technical summary and product information.

The Infineon IPD50N10S3L-16 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It is automotive AEC Q101 qualified, making it suitable for demanding automotive applications.

Key electrical characteristics include a drain-source breakdown voltage of 100V and a continuous drain current of 50A at 25°C case temperature. The on-state resistance (Rds(on)) is as low as 12.5 mΩ typical at VGS=10V and ID=50A, ensuring efficient power transfer.

This MOSFET operates at temperatures up to 175°C and features a thermal resistance junction-to-case of 1.5 K/W. It is supplied in a PG-TO252-3-11 package, designed for surface mounting.

Additional features include 100% avalanche tested and RoHS compliance, further enhancing its suitability for automotive and industrial power management solutions.

IPD50N10S3L-16 Quick Information

Product Type: N-channel MOSFET

Series: OptiMOS™-T

Canonical Name: Infineon IPD50N10S3L-16 N-channel MOSFET

Subcategory: N-Channel

IPD50N10S3L-16 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50N10S3L-16 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N10S3L-16 Features

Automotive AEC Q101 qualified.
100V drain-source breakdown voltage.
50A continuous drain current.
Low Rds(on) down to 12.5 mΩ.
175°C maximum operating temperature.

IPD50N10S3L-16 Applications

Automotive 48V inverters.
Power management solutions.
Load switching applications.
High-efficiency power conversion.

IPD50N10S3L-16 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPD50N10S3L-16?

The drain-source breakdown voltage is 100V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1.7V.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A at 25°C case temperature.

What is the typical on-state resistance (Rds(on))?

The typical on-state resistance is 12.5 mΩ at VGS=10V and ID=50A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPD50N10S3L-16 supplied in?

It is supplied in a PG-TO252-3-11 package.

Is this MOSFET qualified for automotive applications?

Yes, it is automotive AEC Q101 qualified.