IPD50N06S4L12ATMA2 The IPD50N06S4L12ATMA2 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS-T2 series. It features a 60V drain-source voltage and a 50A continuous drain current in a surface-mount TO-252-3 (DPak) package.
Mfr Part #:

IPD50N06S4L12ATMA2

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPD50N06S4L12ATMA2 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS-T2 series. It features a 60V drain-source voltage and a 50A continuous drain current in a surface-mount TO-252-3 (DPak) package.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.42 - $1.64

IPD50N06S4L12ATMA2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,520 pcs
8520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 21+ On Request On Request

IPD50N06S4L12ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50N06S4L12ATMA2 Description

Short technical summary and product information.

The Infineon IPD50N06S4L12ATMA2 is an N-channel enhancement mode power MOSFET built on the OptiMOS-T2 technology platform. It is designed for automotive and industrial power switching applications requiring high efficiency and robustness. This MOSFET offers a drain-source voltage (Vds) of 60V and a continuous drain current of 50A at 25°C. The on-state resistance is typically 9.6 mOhm at 10V gate drive, enabling low conduction losses.

 

The device is AEC Q101 qualified and operates over a junction temperature range of -55°C to 175°C. It supports gate drive voltages of 4.5V and 10V, and its gate threshold voltage ranges from 1.2V to 2.2V. The part is RoHS compliant and has an MSL rating of 1 (unlimited at 260°C peak reflow).

 

Packaged in a PG-TO252-3-11 (DPak/TO-252) surface mount package, this MOSFET is suitable for compact power supply designs, motor control, and DC-DC converters. The device is 100% avalanche tested and exhibits low gate charge (30 nC typical) for efficient high-frequency switching.

IPD50N06S4L12ATMA2 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS-T2
Canonical Name: IPD50N06S4L12ATMA2 OptiMOS-T2 N-Channel MOSFET 60V 50A TO-252-3 (DPak)
Subcategory: N-Channel Power MOSFET

IPD50N06S4L12ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

IPD50N06S4L12ATMA2 Estimated Pricing

Qty Low High
1+ $1.64 $1.64
10+ $1.04 $1.04
100+ $0.69 $0.69
500+ $0.54 $0.54
1,000+ $0.49 $0.49
2,500+ $0.44 $0.44
5,000+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N06S4L12ATMA2 Features

  • 60V drain-source voltage rating.
  • 50A continuous drain current at 25°C.
  • Typical Rds(on) of 9.6 mOhm at 10V.
  • AEC Q101 automotive qualified.
  • MSL 1 with 260°C peak reflow compatibility.

IPD50N06S4L12ATMA2 Applications

  • Automotive power switching and motor control.
  • DC-DC converters and voltage regulators.
  • Power supply output stages and load switches.
  • High-frequency switching applications.
  • Battery management and protection circuits.

IPD50N06S4L12ATMA2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the IPD50N06S4L12ATMA2?

The drain-source voltage (Vds) is 60 V.

What is the continuous drain current rating?

The continuous drain current is 50 A at Tc=25°C with Vgs=10V, and 36 A at Tc=100°C.

What package is this MOSFET available in?

The package is surface-mount TO-252-3 (DPak, PG-TO252-3-11).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPD50N06S4L12ATMA2 RoHS compliant?

Yes, it is RoHS compliant (Green Product).

What is the typical on-state resistance at 10V gate drive?

The typical Rds(on) is 9.6 mOhm at Vgs=10V and Id=50A. The maximum is 12 mOhm.

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