IPD50N06S4L08ATMA2 N-Channel 60V 50A MOSFET from Infineon Technologies. Features 7.8mOhm maximum on-resistance at 50A and 10V gate drive.
Mfr Part #:

IPD50N06S4L08ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 60V 50A MOSFET from Infineon Technologies. Features 7.8mOhm maximum on-resistance at 50A and 10V gate drive.
✓ Total Stock: 267 pcs
$ Price Range: $0.47 - $1.98

IPD50N06S4L08ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
267 pcs
267 pcs On Request 1 On Request On Request 2021+ On Request On Request

IPD50N06S4L08ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50N06S4L08ATMA2 Description

Short technical summary and product information.

The IPD50N06S4L08ATMA2 is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for efficient power switching. It features a drain-source voltage rating of 60V and a continuous drain current of 50A at 25°C case temperature. The maximum on-resistance is 7.8mOhm with a 10V gate drive, minimizing conduction losses. The device has a typical gate threshold voltage of 2.2V and a maximum gate charge of 64nC, with input capacitance of 4780pF at 25V drain-source. It operates over a junction temperature range of -55°C to 175°C and dissipates up to 71W. The MOSFET is surface mounted in a TO-252-3 (DPak) package, suitable for automated assembly. Applications include power supplies, DC-DC converters, motor control, and load switching in industrial and automotive systems.

IPD50N06S4L08ATMA2 Quick Information

Product Type: Single MOSFET
Canonical Name: IPD50N06S4L08ATMA2 N-Channel 60V 50A MOSFET
Subcategory: Single MOSFET

IPD50N06S4L08ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD50N06S4L08ATMA2 Estimated Pricing

Qty Low High
1+ $1.98 $1.98
10+ $1.26 $1.26
100+ $0.85 $0.85
500+ $0.67 $0.67
1,000+ $0.61 $0.61
2,500+ $0.51 $0.51
5,000+ $0.49 $0.49
10,000+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N06S4L08ATMA2 Features

  • N-Channel 60V 50A MOSFET.
  • 7.8mOhm maximum on-resistance.
  • Surface mount TO-252-3 package.
  • Gate drive voltage 4.5V to 10V.
  • Maximum junction temperature 175°C.

IPD50N06S4L08ATMA2 Applications

  • Power supply and DC-DC converter applications.
  • Motor drive and load switching.
  • Battery protection circuits.

IPD50N06S4L08ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD50N06S4L08ATMA2?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 50A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 7.8mOhm at Id=50A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the IPD50N06S4L08ATMA2 available in?

It is available in a TO-252-3 (DPak) surface mount package.

Is the IPD50N06S4L08ATMA2 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.2V at Id=35µA.

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