IPD50N06S4L-08

The Infineon IPD50N06S4L-08 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family, qualified for automotive applications. It features a drain-source breakdown voltage of 60V and a maximum drain-source on-state resistance of 7.8mΩ at a gate-source voltage of 10V and a drain current of 50A.

This MOSFET is designed for high-performance applications, offering a continuous drain current of 50A at 25°C case temperature and 47A at 100°C case temperature. It boasts a low thermal resistance of 2.1 K/W junction-to-case, enabling efficient heat dissipation. The operating temperature range is from -55°C to +175°C.

Key electrical characteristics include a gate threshold voltage between 1.2V and 2.2V, and low on-state resistances. Dynamic characteristics such as input capacitance, output capacitance, and reverse transfer capacitance are also specified, along with switching times like turn-on delay, rise time, turn-off delay, and fall time. The device also includes a reverse diode with specified forward current and voltage characteristics.

Packaged in a PG-TO252-3-11 surface-mount package, the IPD50N06S4L-08 is suitable for various automotive systems including valves, solenoids, and lighting control. It is AEC Q101 qualified and RoHS compliant.