Mfr Part #:

IPD50N06S2L13ATMA2

N-Channel MOSFET from Infineon Technologies with 55V drain-source voltage and 50A continuous drain current. Features low on-resistance of 12.7mΩ at 10V gate drive.

✓ Total Stock: 544 pcs

$ Price Range: $0.65 - $2.43

IPD50N06S2L13ATMA2 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	544 pcs On Request	544 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD50N06S2L13ATMA2 Description

Short technical summary and product information.

This is an N-channel enhancement mode MOSFET from Infineon's OptiMOS series, designed for automotive applications (AEC Q101 qualified). It features a maximum drain-source voltage of 55V and continuous drain current of 50A at 25°C case temperature.

The device offers ultra-low on-resistance: 12.7mΩ typical at Vgs=10V and 34A, and 16.7mΩ maximum at Vgs=4.5V. Gate threshold voltage ranges from 1.2V to 2.0V, making it suitable for logic-level drive. It is 100% avalanche tested with single pulse avalanche energy rating of 240mJ.

The MOSFET is housed in a surface-mount PG-TO252-3-11 package (DPak), with a maximum power dissipation of 136W at 25°C case temperature. Operating junction temperature range is -55°C to 175°C. It is RoHS3 compliant and MSL1 rated for up to 260°C peak reflow.

IPD50N06S2L13ATMA2 Quick Information

Product Type: MOSFET

Series: OptiMOS

Canonical Name: Infineon Technologies IPD50N06S2L13ATMA2 N-Channel MOSFET

Subcategory: Single MOSFET

IPD50N06S2L13ATMA2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPD50N06S2L13ATMA2 Estimated Pricing

Qty	Low	High
1+	$2.43	$2.43
10+	$1.38	$1.38
100+	$1.02	$1.02
500+	$0.85	$0.85
1,000+	$0.78	$0.78
2,500+	$0.67	$0.67
5,000+	$0.66	$0.66
10,000+	$0.65	$0.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N06S2L13ATMA2 Features

N-channel enhancement mode MOSFET with 55V drain-source voltage.
Continuous drain current rating of 50A at 25°C case temperature.
Ultra low on-resistance of 12.7mΩ typical at 10V gate drive.
Automotive AEC Q101 qualified for reliability.
Surface mount PG-TO252-3-11 package for compact designs.

IPD50N06S2L13ATMA2 Applications

Suitable for automotive power management and motor control.
Ideal for DC-DC converters and switching power supplies.
Used in high-current load switching applications.
Designed for logic-level gate drive circuits.

IPD50N06S2L13ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of this MOSFET?

55V.

What package is this MOSFET available in?

PG-TO252-3-11 (DPak) surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is this component RoHS compliant?

RoHS3 compliant (unverified).

What is the continuous drain current rating?

50A at Tc=25°C with Vgs=10V.

What is the typical on-resistance at 10V gate drive?

10.2mΩ typical at Id=34A, Vgs=10V.

Is this MOSFET AEC Q101 qualified?

Yes, it is automotive AEC Q101 qualified.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	50A (Tc)
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	136W (Tc)
Rds On (Max) @ Id, Vgs	12.7mOhm
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	PG-TO252-3-11
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 80µA