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IPD50N06S2L-13 The Infineon IPD50N06S2L-13 is an N-channel Logic Level Power MOSFET designed for power control applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 50A.
Mfr Part #:

IPD50N06S2L-13

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD50N06S2L-13 is an N-channel Logic Level Power MOSFET designed for power control applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 50A.
✓ Total Stock: 5,659 pcs
$ Price Range: $1.67

IPD50N06S2L-13 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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5,659 pcs
On Request
5659 pcs On Request 1 On Request On Request 21 On Request On Request
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IPD50N06S2L-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation
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IPD50N06S2L-13 Description

Short technical summary and product information.

The Infineon IPD50N06S2L-13 is an OptiMOS® Power-Transistor featuring N-channel Logic Level enhancement mode. It is Automotive AEC Q101 qualified and operates at temperatures up to 175°C.

 

Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 50A at 25°C case temperature. The device boasts ultra-low Rds(on), with a typical value of 10.2 mΩ at VGS=10V and ID=34A, and 12.7 mΩ at VGS=4.5V and ID=34A. It also features a gate threshold voltage between 1.2V and 2.0V.

 

This MOSFET is designed for high-performance power control. It is 100% avalanche tested and comes in a green, lead-free package.

 

The IPD50N06S2L-13 is supplied in a PG-TO252-3-11 package suitable for surface mounting. Its thermal resistance from junction to case is a low 1.1 K/W.

IPD50N06S2L-13 Quick Information

Product Type: N-channel Logic Level Power MOSFET
Series: IPD50N06S2L-13
Canonical Name: IPD50N06S2L-13 OptiMOS® Power-Transistor
Subcategory: N-Channel

IPD50N06S2L-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Green package (lead free)

IPD50N06S2L-13 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N06S2L-13 Features

  • Automotive AEC Q101 qualified
  • N-channel logic level enhancement mode
  • Ultra low Rds(on)
  • 175°C operating temperature
  • 55V drain-source breakdown voltage

IPD50N06S2L-13 Applications

  • Suitable for automotive power switching applications.
  • Used in high-current motor control circuits.
  • Ideal for low Rds(on) power switching devices.
  • Applicable in DC-DC power conversion systems.
  • Suitable for high-temperature power management.

IPD50N06S2L-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A.

What is the typical drain-source on-state resistance at VGS=10V?

The typical drain-source on-state resistance at VGS=10V and ID=34A is 10.2 mΩ.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package is this MOSFET supplied in?

This MOSFET is supplied in the PG-TO252-3-11 package.

Is this MOSFET AEC Q101 qualified?

Yes, this MOSFET is Automotive AEC Q101 qualified.

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