Mfr Part #:

IPD50N04S4L-08

Mfr Name: Infineon

The Infineon IPD50N04S4L-08 is an N-channel OptiMOS®-T2 Power-Transistor. It offers a 40V drain-source breakdown voltage and a continuous drain current of up to 50A.

✓ Total Stock: 15,106 pcs

$ Price Range: $1.67

IPD50N04S4L-08 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,931 pcs On Request	7931 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	6,098 pcs On Request	6098 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,077 pcs On Request	1077 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD50N04S4L-08 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	-55 °C / 175 °C
Power Dissipation	46
Reverse Recovery Time	34

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IPD50N04S4L-08 Description

Short technical summary and product information.

The Infineon IPD50N04S4L-08 is an N-channel OptiMOS®-T2 Power-Transistor designed for demanding applications. It features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C.

Key electrical characteristics include a low drain-source on-state resistance, with a typical value of 6.2 mΩ at VGS=10V and ID=50A. The gate threshold voltage is typically 1.7V. Dynamic characteristics such as input capacitance (Ciss) are up to 2340 pF, and output capacitance (Coss) is up to 455 pF.

This AEC qualified transistor operates at temperatures up to 175°C and is supplied in a PG-TO252-3-313 package suitable for surface mounting. It is also RoHS compliant and rated for MSL1.

Applications include automotive and motor control due to its robust performance and high current handling capabilities.

IPD50N04S4L-08 Quick Information

Product Type: Power-Transistor

Series: IPD50N04S4L

Canonical Name: IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor

Subcategory: N-channel Power MOSFET

IPD50N04S4L-08 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50N04S4L-08 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S4L-08 Features

N-channel enhancement mode OptiMOS®-T2 transistor.
40V drain-source breakdown voltage.
50A continuous drain current.
Low RDS(on) down to 6.2 mΩ.
AEC qualified for automotive use.

IPD50N04S4L-08 Applications

Automotive applications.
Motor control systems.
Power switching circuits.
High-current applications.

IPD50N04S4L-08 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.7V.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A at 25°C.

What is the typical drain-source on-state resistance at 10V gate drive?

The typical drain-source on-state resistance is 6.2 mΩ at 10V gate drive and 50A drain current.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TO252-3-313.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.