| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IPD50N04S4L-08 is an OptiMOS-T2 series N-channel enhancement mode power MOSFET. It features a 40V drain-source breakdown voltage and a continuous drain current of 50A at 25°C case temperature.
This MOSFET exhibits a low on-state resistance, with a maximum of 7.3 mΩ at VGS=10V and ID=50A. It also has a gate threshold voltage ranging from 1.2V to 2.2V. The device is AEC qualified and operates at temperatures up to 175°C.
Packaged in a PG-TO252-3-313 surface-mount package, the IPD50N04S4L-08 is suitable for various power management applications. Its robust design and specifications make it a reliable choice for demanding environments.
Key electrical characteristics include input capacitance (Ciss) up to 2340pF, output capacitance (Coss) up to 455pF, and reverse transfer capacitance (Crss) up to 35pF. Dynamic characteristics such as turn-on delay time (td(on)) are typically 4ns, rise time (tr) is 8ns, turn-off delay time (td(off)) is 11ns, and fall time (tf) is 18ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 50A at TC=25°C and 49A at TC=100°C.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.7V.
The maximum RDS(on) is 7.3 mΩ at VGS=10V and ID=50A.
It is supplied in the PG-TO252-3-313 package.
The operating temperature range is -55°C to +175°C.