IPD50N04S4L-08 The Infineon Technologies IPD50N04S4L-08 is an N-channel Power MOSFET designed for automotive and motor control applications. It offers a 40V breakdown voltage and 50A continuous drain current.
Mfr Part #:

IPD50N04S4L-08

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPD50N04S4L-08 is an N-channel Power MOSFET designed for automotive and motor control applications. It offers a 40V breakdown voltage and 50A continuous drain current.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.67

IPD50N04S4L-08 Available from 1 distributor

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✓ Non-Authorised
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IPD50N04S4L-08 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Storage Temperature
Tape & Reel

IPD50N04S4L-08 Description

Short technical summary and product information.

The Infineon Technologies IPD50N04S4L-08 is an OptiMOS-T2 series N-channel enhancement mode power MOSFET. It features a 40V drain-source breakdown voltage and a continuous drain current of 50A at 25°C case temperature.

 

This MOSFET exhibits a low on-state resistance, with a maximum of 7.3 mΩ at VGS=10V and ID=50A. It also has a gate threshold voltage ranging from 1.2V to 2.2V. The device is AEC qualified and operates at temperatures up to 175°C.

 

Packaged in a PG-TO252-3-313 surface-mount package, the IPD50N04S4L-08 is suitable for various power management applications. Its robust design and specifications make it a reliable choice for demanding environments.

 

Key electrical characteristics include input capacitance (Ciss) up to 2340pF, output capacitance (Coss) up to 455pF, and reverse transfer capacitance (Crss) up to 35pF. Dynamic characteristics such as turn-on delay time (td(on)) are typically 4ns, rise time (tr) is 8ns, turn-off delay time (td(off)) is 11ns, and fall time (tf) is 18ns.

IPD50N04S4L-08 Quick Information

Product Type: Power MOSFET
Series: IPD50N04S4L-08
Canonical Name: Infineon Technologies IPD50N04S4L-08 N-channel Power MOSFET
Subcategory: Power MOSFET

IPD50N04S4L-08 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: true

IPD50N04S4L-08 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S4L-08 Features

  • N-channel enhancement mode MOSFET
  • 40V drain-source breakdown voltage
  • 50A continuous drain current
  • Low RDS(on) up to 7.3 mΩ
  • AEC qualified

IPD50N04S4L-08 Applications

  • Automotive motor control
  • Power management applications
  • Switching power supplies
  • DC-DC converters

IPD50N04S4L-08 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPD50N04S4L-08?

The maximum continuous drain current is 50A at TC=25°C and 49A at TC=100°C.

What is the drain-source breakdown voltage of the IPD50N04S4L-08?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1.7V.

What is the maximum on-state resistance (RDS(on))?

The maximum RDS(on) is 7.3 mΩ at VGS=10V and ID=50A.

What package type is the IPD50N04S4L-08 supplied in?

It is supplied in the PG-TO252-3-313 package.

What is the operating temperature range for this device?

The operating temperature range is -55°C to +175°C.

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