Mfr Part #:

IPD50N04S410ATMA1

N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 family. Rated for 40V drain-source voltage and 50A continuous drain current with 9.3mΩ max on-resistance.

✓ Total Stock: 7,025 pcs

$ Price Range: $0.29 - $1.27

IPD50N04S410ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,025 pcs On Request	7025 pcs	On Request	1	On Request	On Request	22+	On Request	On Request

IPD50N04S410ATMA1 Description

Short technical summary and product information.

The Infineon IPD50N04S410ATMA1 is an N-channel enhancement mode power MOSFET from the OptiMOS-T2 family. It is designed for high-efficiency power conversion and switching applications.

Key electrical specifications include a drain-source breakdown voltage of 40V, continuous drain current of 50A at 25°C (36A at 100°C), and a maximum drain-source on-resistance of 9.3mΩ at 10V gate drive. The device features a total gate charge of 18.2nC and input capacitance of 1430pF, enabling fast switching performance.

The MOSFET is housed in a surface-mount PG-TO252-3-313 package (DPak) and is rated for an operating junction temperature range of -55°C to 175°C. It is RoHS compliant and qualified to MSL1 up to 260°C peak reflow temperature.

IPD50N04S410ATMA1 Quick Information

Product Type: MOSFET

Series: IPD50N04S4-10

Canonical Name: Infineon IPD50N04S4-10 OptiMOS-T2 N-Channel MOSFET

Subcategory: Single MOSFET

IPD50N04S410ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 - Unlimited

REACH Status: REACH Unaffected

IPD50N04S410ATMA1 Estimated Pricing

Qty	Low	High
1+	$1.27	$1.27
10+	$0.80	$0.80
50+	$0.59	$0.59
100+	$0.52	$0.52
500+	$0.41	$0.41
2,500+	$0.33	$0.33
7,500+	$0.29	$0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S410ATMA1 Features

N-channel enhancement mode power MOSFET.
40V drain-source breakdown voltage rating.
50A continuous drain current at 25°C.
9.3mΩ maximum on-resistance at 10V gate drive.
175°C maximum junction temperature rating.

IPD50N04S410ATMA1 Applications

DC-DC converters and power supplies.
Motor control and drive circuits.
Automotive electronic control units.
Load switching and power management.
Battery protection and management systems.

IPD50N04S410ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IPD50N04S410ATMA1?

The maximum drain-source voltage (Vds) is 40V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 50A at Tc=25°C and 36A at Tc=100°C.

What is the on-resistance of the IPD50N04S410ATMA1?

The typical on-resistance is 8.5mΩ and the maximum is 9.3mΩ at Vgs=10V and Id=50A.

What package is the IPD50N04S410ATMA1 available in?

It is available in a surface-mount PG-TO252-3-313 package (DPak).

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IPD50N04S410ATMA1 RoHS compliant?

Yes, it is RoHS compliant (Green Product).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.0 nC (typ), 18.2 nC (max)
Input Capacitance (Ciss) (Max) @ Vds	1100 pF (typ), 1430 pF (max)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	41 W
Rds On (Max) @ Id, Vgs	8.5 mΩ (typ), 9.3 mΩ (max)
Reverse Recovery Time	34 ns
Supplier Device Package	PG-TO252-3-313
Supplier Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.0 V (min), 3.0 V (typ), 4.0 V (max)