Mfr Part #:

IPD50N04S408ATMA1

N-Channel MOSFET rated at 40V drain-source voltage and 50A continuous drain current. Optimized for automotive applications with 175°C operating temperature.

✓ Total Stock: 1,716 pcs

$ Price Range: $0.30 - $1.30

IPD50N04S408ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,716 pcs On Request	1716 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD50N04S408ATMA1 Description

Short technical summary and product information.

The IPD50N04S408ATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 series. It features a drain-source breakdown voltage of 40V and a continuous drain current of 50A at 25°C (47A at 100°C). The on-resistance is typically 7.2mΩ with a maximum of 7.9mΩ at Vgs=10V, Id=50A. Gate threshold voltage ranges from 2.0V to 4.0V, and the total gate charge is 22.4nC maximum. This MOSFET offers fast switching with turn-on delay of 5ns, rise time 7ns, turn-off delay 5ns, and fall time 6ns. The device is housed in a TO-252-3 (DPak) surface-mount package with a junction-to-case thermal resistance of 3.3K/W. It operates over a temperature range of -55°C to 175°C and is RoHS compliant (Green Product) with MSL1 rating. The part is AEC qualified and 100% avalanche tested, making it suitable for automotive and industrial power management applications.

IPD50N04S408ATMA1 Quick Information

Product Type: MOSFET

Series: OptiMOS-T2

Canonical Name: Infineon Technologies IPD50N04S408ATMA1 N-Channel 40V 50A MOSFET

Subcategory: Single MOSFET

IPD50N04S408ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 – Unlimited

REACH Status: REACH Unaffected

IPD50N04S408ATMA1 Estimated Pricing

Qty	Low	High
1+	$1.30	$1.30
10+	$0.82	$0.82
50+	$0.61	$0.61
100+	$0.54	$0.54
500+	$0.42	$0.42
2,500+	$0.34	$0.34
7,500+	$0.30	$0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S408ATMA1 Features

N-channel enhancement mode MOSFET.
40V drain-source voltage rating.
50A continuous drain current at 25°C.
7.9mΩ maximum on-resistance.
AEC qualified for automotive use.

IPD50N04S408ATMA1 Applications

Ideal for automotive electronic control units.
Suitable for DC-DC converters and power supplies.
Used in motor drive and load switch applications.
Perfect for battery management systems.

IPD50N04S408ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPD50N04S408ATMA1?

The drain-source voltage (Vdss) is 40V.

What package does the IPD50N04S408ATMA1 come in?

It is available in a TO-252-3 (DPak) surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

Is the IPD50N04S408ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant (Green Product).

What is the on-resistance of this MOSFET?

Typical on-resistance is 7.2mΩ, maximum 7.9mΩ at Vgs=10V, Id=50A.

What is the maximum drain current rating?

Continuous drain current is 50A at Tc=25°C, 47A at Tc=100°C. Pulsed drain current is 200A.

Is this MOSFET AEC qualified?

Yes, it is AEC qualified for automotive applications.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.2 nC (typ) / 22.4 nC (max)
Input Capacitance (Ciss) (Max) @ Vds	1780 pF
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55 °C to 175 °C
Power Dissipation (Max)	46 W
Rds On (Max) @ Id, Vgs	7.2 mOhm (typ) / 7.9 mOhm (max)
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.0 V (min) / 3.0 V (typ) / 4.0 V (max)