Mfr Part #:

IPD50N04S3-08

Mfr Name: Infineon

The Infineon IPD50N04S3-08 is an N-channel OptiMOS®-T power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 50A.

✓ Total Stock: 21,463 pcs

$ Price Range: $2.40

IPD50N04S3-08 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	20,000 pcs On Request	20000 pcs	On Request	1	On Request	On Request	14+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,463 pcs On Request	1463 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD50N04S3-08 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Automotive Grade	Yes
Halogen Free	Yes
Mounting Type	Surface Mount
Power Dissipation	68 W
Reverse Recovery Time	30 ns
SVHC Present	Not Present

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IPD50N04S3-08 Description

Short technical summary and product information.

The Infineon IPD50N04S3-08 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T family, qualified for automotive AEC Q101 standards. This device is designed for demanding applications, featuring a drain-source breakdown voltage of 40V and a continuous drain current capability of 50A at 25°C case temperature.

Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of typically 5.9 mΩ at 10V gate-source voltage and 50A drain current, with a maximum of 7.5 mΩ. The gate threshold voltage ranges from 2.1V to 4.0V. Dynamic characteristics such as input capacitance (Ciss) are typically 1800pF, output capacitance (Coss) at 540pF, and reverse transfer capacitance (Crss) at 76pF.

With an operating temperature range of -55°C to +175°C and a high power dissipation capability of 68W at 25°C, this MOSFET is suitable for high-power switching applications. It is supplied in a PG-TO252-3-11 surface-mount package, facilitating integration into compact designs. The device also features a green package, indicating RoHS compliance, and is 100% avalanche tested.

IPD50N04S3-08 Quick Information

Product Type: MOSFET

Series: OptiMOS®-T

Canonical Name: Infineon IPD50N04S3-08 N-channel MOSFET

Subcategory: N-Channel Power MOSFET

IPD50N04S3-08 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: No

IPD50N04S3-08 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S3-08 Features

Automotive AEC Q101 qualified
N-channel enhancement mode MOSFET
40V drain-source breakdown voltage
50A continuous drain current
Low Rds(on) of 7.5 mΩ maximum

IPD50N04S3-08 Applications

Suitable for PWM motor control
Used in automotive power systems
High-efficiency power switching
Designed for demanding applications

IPD50N04S3-08 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPD50N04S3-08?

The drain-source breakdown voltage is 40V.

What is the maximum continuous drain current for the IPD50N04S3-08?

The maximum continuous drain current is 50A.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 7.5 mΩ.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package type is the IPD50N04S3-08 supplied in?

It is supplied in a PG-TO252-3-11 package.

Is the IPD50N04S3-08 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.