| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This is an N-Channel MOSFET from Infineon Technologies. It features a 30V drain-to-source voltage rating and a continuous drain current of 50A at case temperature. The maximum on-resistance is 5.5 mOhm at 50A and 10V gate drive.
The device is built with MOSFET (Metal Oxide) technology and has a maximum gate charge of 31 nC at 10V. Input capacitance is 2330 pF at 25V. The gate threshold voltage is 2.2V at 20µA. Maximum gate-source voltage is ±16V. Drive voltage is 4.5V and 10V.
The MOSFET can dissipate up to 56W at case temperature and operates over a junction temperature range of -55°C to 175°C. It is designed for surface mount mounting in a TO-252-3, DPak (2 leads + tab), SC-63 package. The supplier device package is PG-TO252-3-11.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.40 | $1.40 |
| 10+ | $0.88 | $0.88 |
| 50+ | $0.65 | $0.65 |
| 100+ | $0.58 | $0.58 |
| 500+ | $0.45 | $0.45 |
| 2,500+ | $0.37 | $0.37 |
| 7,500+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating junction temperature range is -55°C to 175°C.
The component is listed as RoHS3 compliant, but this is unverified.
The maximum continuous drain current is 50A at case temperature.
The maximum on-resistance is 5.5 mOhm at 50A and 10V gate drive.
The maximum gate charge is 31 nC at 10V gate-source voltage.