| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,730 pcs
|
7730 pcs | On Request | 1 | On Request | On Request | 1119+ | On Request | On Request | |
|
3,899 pcs
|
3899 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IPD50N03S4L-06 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family, qualified for automotive AEC Q101 standards. This device is designed for high-performance applications, featuring a drain-source breakdown voltage of 30V and a continuous drain current capability of 50A at 25°C case temperature with a 10V gate-source voltage.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 5.5 mΩ maximum at 10V gate-source voltage and 50A drain current, and 9.0 mΩ maximum at 4.5V gate-source voltage and 25A drain current. The device also exhibits fast switching characteristics with typical turn-on delay of 3ns and turn-off delay of 19ns.
With an operating temperature range of -55°C to +175°C and a power dissipation of 56W at 25°C, the IPD50N03S4L-06 is suitable for demanding environments. It is packaged in a PG-TO252-3-11 surface-mount package, facilitating integration into compact designs.
This MOSFET is 100% avalanche tested and meets MSL1 requirements up to 260°C peak reflow. It is also a green product, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1.5V.
The maximum drain-source on-state resistance is 5.5 mΩ at 10V gate-source voltage and 50A drain current.
The continuous drain current is 50A at 25°C case temperature with a 10V gate-source voltage.
The operating temperature range is -55°C to +175°C.
This MOSFET is supplied in a PG-TO252-3-11 package.
Yes, this MOSFET is Automotive AEC Q101 qualified.