IPD50N03S2-07 Infineon IPD50N03S2-07 is an N-Channel Power MOSFET with 30V drain-source voltage, 50A continuous drain current, and 7.3mΩ on-resistance. Housed in a TO-252-3 (DPak) surface-mount package.
Mfr Part #:

IPD50N03S2-07

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD50N03S2-07 is an N-Channel Power MOSFET with 30V drain-source voltage, 50A continuous drain current, and 7.3mΩ on-resistance. Housed in a TO-252-3 (DPak) surface-mount package.
✓ Total Stock: 9,886 pcs
$ Price Range: $0.79 - $2.65

IPD50N03S2-07 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,386 pcs
7386 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 17+ On Request On Request

IPD50N03S2-07 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD50N03S2-07 Description

Short technical summary and product information.

The Infineon IPD50N03S2-07 is an N-Channel enhancement-mode power MOSFET from the OptiMOS series. It is designed for high-efficiency power conversion applications requiring low on-resistance and fast switching.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 50A at case temperature, and a maximum on-resistance (Rds(on)) of 7.3mΩ at Vgs=10V and Id=50A. The device features a gate charge (Qg) of 68nC at Vgs=10V and an input capacitance (Ciss) of 2000pF at Vds=25V. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=85µA.

 

The MOSFET is housed in a TO-252-3 (DPak) surface-mount package (supplier package PG-TO252-3-1) and supports a maximum power dissipation of 136W at case temperature. It operates over a junction temperature range of -55°C to +175°C.

IPD50N03S2-07 Quick Information

Product Type: Power MOSFET
Series: OptiMOS
Canonical Name: Infineon IPD50N03S2-07 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IPD50N03S2-07 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD50N03S2-07 Estimated Pricing

Qty Low High
1+ $2.65 $2.65
10+ $1.70 $1.70
100+ $1.16 $1.16
500+ $0.98 $0.98
1,000+ $0.87 $0.87
2,500+ $0.82 $0.82
5,000+ $0.79 $0.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N03S2-07 Features

  • N-Channel enhancement-mode power MOSFET.
  • 30V drain-to-source voltage rating.
  • 50A continuous drain current capability.
  • 7.3mΩ maximum on-resistance at 10V gate drive.
  • TO-252-3 surface-mount package.

IPD50N03S2-07 Applications

  • Low-voltage DC-DC converter circuits.
  • Load switching and power management.
  • Motor drive and solenoid control.
  • Battery protection and charging systems.

IPD50N03S2-07 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IPD50N03S2-07?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current of this MOSFET?

The continuous drain current (Id) is 50A at case temperature.

What is the on-resistance of the IPD50N03S2-07?

The maximum on-resistance (Rds(on)) is 7.3mΩ at Vgs=10V and Id=50A.

What package does the IPD50N03S2-07 come in?

It comes in a TO-252-3 (DPak) surface-mount package, supplier package PG-TO252-3-1.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to +175°C.

What is the gate charge of the IPD50N03S2-07?

The maximum gate charge (Qg) is 68nC at Vgs=10V.

What is the input capacitance of this device?

The maximum input capacitance (Ciss) is 2000pF at Vds=25V.

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