| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPD50N03S2-07 is an N-Channel enhancement-mode power MOSFET from the OptiMOS series. It is designed for high-efficiency power conversion applications requiring low on-resistance and fast switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 50A at case temperature, and a maximum on-resistance (Rds(on)) of 7.3mΩ at Vgs=10V and Id=50A. The device features a gate charge (Qg) of 68nC at Vgs=10V and an input capacitance (Ciss) of 2000pF at Vds=25V. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=85µA.
The MOSFET is housed in a TO-252-3 (DPak) surface-mount package (supplier package PG-TO252-3-1) and supports a maximum power dissipation of 136W at case temperature. It operates over a junction temperature range of -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.65 | $2.65 |
| 10+ | $1.70 | $1.70 |
| 100+ | $1.16 | $1.16 |
| 500+ | $0.98 | $0.98 |
| 1,000+ | $0.87 | $0.87 |
| 2,500+ | $0.82 | $0.82 |
| 5,000+ | $0.79 | $0.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 50A at case temperature.
The maximum on-resistance (Rds(on)) is 7.3mΩ at Vgs=10V and Id=50A.
It comes in a TO-252-3 (DPak) surface-mount package, supplier package PG-TO252-3-1.
The operating junction temperature range is -55°C to +175°C.
The maximum gate charge (Qg) is 68nC at Vgs=10V.
The maximum input capacitance (Ciss) is 2000pF at Vds=25V.