IPD35N10S3L26ATMA1 Infineon IPD35N10S3L26ATMA1 is an N-Channel enhancement mode power MOSFET with 100V drain-source breakdown voltage and 35A continuous drain current. It features a low typical on-resistance of 20.0 mΩ at 10V gate drive.
Mfr Part #:

IPD35N10S3L26ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD35N10S3L26ATMA1 is an N-Channel enhancement mode power MOSFET with 100V drain-source breakdown voltage and 35A continuous drain current. It features a low typical on-resistance of 20.0 mΩ at 10V gate drive.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.69 - $2.37

IPD35N10S3L26ATMA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,000 pcs
5000 pcs On Request 1 On Request On Request 21+ On Request On Request

IPD35N10S3L26ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD35N10S3L26ATMA1 Description

Short technical summary and product information.

The Infineon Technologies IPD35N10S3L26ATMA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS-T family, designed for automotive and industrial power switching applications. It is qualified to AEC Q101 and operates over a junction temperature range of -55°C to 175°C.

 

This MOSFET offers a drain-source voltage (Vdss) of 100V and a continuous drain current of 35A at 25°C case temperature. The typical on-resistance is 20.0 mΩ at Vgs=10V and 24.5 mΩ at Vgs=4.5V, enabling efficient low-voltage gate drive operation. Dynamic performance includes typical input capacitance of 2070 pF and total gate charge of 30 nC, supporting fast switching.

 

The device is housed in a surface-mount PG-TO252-3-11 package (DPak) and is RoHS compliant with MSL1 moisture sensitivity level up to 260°C peak reflow. It is 100% avalanche tested, with a single-pulse avalanche energy rating of 175 mJ.

IPD35N10S3L26ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-T
Canonical Name: Infineon Technologies IPD35N10S3L26ATMA1 N-Channel OptiMOS-T Power MOSFET
Subcategory: Power MOSFET

IPD35N10S3L26ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD35N10S3L26ATMA1 Estimated Pricing

Qty Low High
1+ $2.37 $2.37
10+ $1.52 $1.52
100+ $1.03 $1.03
500+ $0.75 $0.75
2,500+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD35N10S3L26ATMA1 Features

  • N-Channel enhancement mode power MOSFET.
  • 100V drain-source breakdown voltage rating.
  • 35A continuous drain current at 25°C.
  • Low typical on-resistance of 20.0 mΩ.
  • AEC Q101 automotive qualified.

IPD35N10S3L26ATMA1 Applications

  • Suitable for automotive power switching circuits.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor control and load switching.
  • Applicable in high-efficiency power management.

IPD35N10S3L26ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD35N10S3L26ATMA1?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current is 35A at Tc=25°C and 25A at Tc=100°C.

What is the operating temperature range?

The junction operating temperature range is -55°C to 175°C.

What package does this MOSFET come in?

It is available in a PG-TO252-3-11 surface-mount package (TO-252-3, DPak).

Is the IPD35N10S3L26ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant as verified by the datasheet.

What is the typical on-resistance at 10V gate drive?

The typical on-resistance is 20.0 mΩ at Vgs=10V and Id=35A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 1.2V minimum to 2.4V maximum, with a typical value of 1.7V at Id=39µA.

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