Mfr Part #:

IPD35N10S3L-26

Mfr Name: Infineon

The Infineon IPD35N10S3L-26 is an N-channel MOSFET designed for automotive applications. It offers a 100V drain-source breakdown voltage and a continuous drain current of 35A.

✓ Total Stock: 16,371 pcs

$ Price Range: $2.93

IPD35N10S3L-26 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	9,093 pcs On Request	9093 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,259 pcs On Request	1259 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	19 pcs On Request	19 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD35N10S3L-26 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Lead Style	Gull-Wing
Mounting Type	Surface Mount
Power Dissipation	71 W
Reverse Recovery Time	79 ns

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IPD35N10S3L-26 Description

Short technical summary and product information.

The Infineon IPD35N10S3L-26 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T family, qualified for automotive AEC Q101 standards. This device features a drain-source breakdown voltage of 100V and can handle a continuous drain current of up to 35A at 25°C case temperature.

Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) of typically 20.0 mΩ at VGS=10V and ID=35A, making it suitable for efficient power conversion. The operating temperature range is -55°C to +175°C, and it supports MSL1 up to 260°C peak reflow.

Packaged in a PG-TO252-3-11 surface-mount package, the IPD35N10S3L-26 is designed for applications requiring high performance and reliability in automotive environments. Its 100% avalanche tested status further underscores its robustness for demanding applications.

IPD35N10S3L-26 Quick Information

Product Type: MOSFET

Series: OptiMOS®-T

Canonical Name: Infineon OptiMOS®-T Power-Transistor IPD35N10S3L-26

Subcategory: Power MOSFET

IPD35N10S3L-26 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD35N10S3L-26 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD35N10S3L-26 Features

Automotive AEC Q101 qualified.
100V drain-source breakdown voltage.
35A continuous drain current.
Low RDS(on) for efficiency.
175°C operating temperature.

IPD35N10S3L-26 Applications

Suitable for 48V converters.
Automotive power management.
High-efficiency switching applications.
Robust power conversion designs.

IPD35N10S3L-26 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.7V.

What is the typical drain-source on-state resistance at VGS=10V?

The typical drain-source on-state resistance at VGS=10V is 20.0 mΩ.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C is 35A.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

What is the package type?

The package type is PG-TO252-3-11.